Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Zhenchao Wen"'
Autor:
Mouli Roy-Chowdhury, Cong He, Ke Tang, Hiroki Koizumi, Zhenchao Wen, Subhash Thota, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani
Publikováno v:
Science and Technology of Advanced Materials, Vol 25, Iss 1 (2024)
The cubic perovskite SrMoO3 with a paramagnetic ground state and remarkably low room-temperature resistivity has been considered as a suitable candidate for the new-era oxide-based technology. However, the difficulty of preparing single-phase SrMoO3
Externí odkaz:
https://doaj.org/article/c8a50bae1b024dc09eeafb05924be164
Autor:
Ke Tang, Cong He, Zhenchao Wen, Hiroaki Sukegawa, Tadakatsu Ohkubo, Yukio Nozaki, Seiji Mitani
Publikováno v:
APL Materials, Vol 12, Iss 3, Pp 031131-031131-7 (2024)
Epitaxial thin films of fully nonequilibrium hcp-Ru50Mo50(0001) nanoalloys were prepared as a chemically disordered alloy, in which the intrinsic spin Hall effect is expected to be negligible. Structural analyses confirmed the epitaxial growth and at
Externí odkaz:
https://doaj.org/article/2a3f01e6c0ab462dac3ac74daefc144d
Spin Seebeck effect mediated reversal of vortex-Nernst effect in superconductor-ferromagnet bilayers
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-8 (2023)
Abstract We report on the observation of sign reversal of vortex-Nernst effect in epitaxial NbN/Fe bilayers deposited on MgO (001) substrates. Strong coupling between vortex magnetisation and ferromagnetic magnetisation at the NbN/Fe bilayer interfac
Externí odkaz:
https://doaj.org/article/7d79253522954f7f865175747f331a29
Autor:
Atsufumi Hirohata, David C. Lloyd, Takahide Kubota, Takeshi Seki, Koki Takanashi, Hiroaki Sukegawa, Zhenchao Wen, Seiji Mitani, Hiroki Koizumi
Publikováno v:
IEEE Access, Vol 11, Pp 117443-117459 (2023)
Spintronic devices are expected to replace the recent nanoelectronic memories and sensors due to their efficiency in energy consumption and functionality with scalability. To date, spintronic devices, namely magnetoresistive junctions, employ ferroma
Externí odkaz:
https://doaj.org/article/efedf8a4044a4baab293205a12d3fb4f
Publikováno v:
Advanced Materials Interfaces, Vol 9, Iss 36, Pp n/a-n/a (2022)
Abstract This work reports on Ni and Fe doping and interface effects on spin–orbit torques (SOTs) generated from a topological semimetal CoSi. CoSi thin films grown on Al2O3(0001) substrates by magnetron co‐sputtering show the B20 structure with
Externí odkaz:
https://doaj.org/article/5e423ac85c264af098961fa17bd1ca4f
Autor:
Ke Tang, Yong-Chang Lau, Kenji Nawa, Zhenchao Wen, Qingyi Xiang, Hiroaki Sukegawa, Takeshi Seki, Yoshio Miura, Koki Takanashi, Seiji Mitani
Publikováno v:
Physical Review Research, Vol 3, Iss 3, p 033101 (2021)
The spin-1 chiral semimetal is a state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the
Externí odkaz:
https://doaj.org/article/f6aa1b4fa6b74770990632172fa7632b
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 056307-056307-8 (2016)
We study the spin-orbit torque (SOT) effective fields in Cr/CoFeAl/MgO and Ru/CoFeAl/MgO magnetic heterostructures using the adiabatic harmonic Hall measurement. High-quality perpendicular-magnetic-anisotropy CoFeAl layers were grown on Cr and Ru lay
Externí odkaz:
https://doaj.org/article/4dbe005a26ab41be97e466d892c4ccb5
Publikováno v:
Materials, Vol 11, Iss 2, p 219 (2018)
Current perpendicular-to-plane (CPP) giant magnetoresistance (GMR) effects are of interest in a possible application of magnetic sensor elements, such as read-head of hard disk drives. To improve the junction performance, the interface tailoring effe
Externí odkaz:
https://doaj.org/article/ecbe11a43aa4400dbe20995a7d260832
Autor:
Jieyuan SONG, Cong He, Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa, Tadakatsu Ohkubo, Yukio Nozaki, Seiji Mitani
Publikováno v:
Nanotechnology.
The demonstration of the spin-charge conversion, especially with enhanced spin Hall conductivity, is crucial for the development of energy-efficient spintronic devices such as spin-orbital torque (SOT) based magnetoresistive random access memories. I
Autor:
Ruma Mandal, Ivan Kurniawan, Ippei Suzuki, Zhenchao Wen, Yoshio Miura, Takahide Kubota, Koki Takanashi, Tadakatsu Ohkubo, Kazuhiro Hono, Yukiko K Takahashi
Publikováno v:
ACS Applied Nano Materials. 5:569-577