Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Zhechi Ye"'
Publikováno v:
2023 5th Asia Energy and Electrical Engineering Symposium (AEEES).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d067b3390d29c0f692cba7d49cf9c13a
https://doi.org/10.1109/aeees56888.2023.10114368
https://doi.org/10.1109/aeees56888.2023.10114368
Publikováno v:
2023 5th Asia Energy and Electrical Engineering Symposium (AEEES).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae9e812ceb8a283d81e9f56b729b3d0
https://doi.org/10.1109/aeees56888.2023.10114293
https://doi.org/10.1109/aeees56888.2023.10114293
Publikováno v:
IEEE Microwave Magazine. 23:72-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f365ee9d754e3d0952604584fa98df2
https://doi.org/10.1109/mmm.2021.3132111
https://doi.org/10.1109/mmm.2021.3132111
Publikováno v:
IEEE Transactions on Power Electronics. 35:6340-6349
Wireless power transfer systems and plasma generators are among the increasing number of applications that use high-frequency power converters. Increasing switching frequency can reduce the energy storage requirements of the passive elements that can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc76f929a2168cf9aa3704e2885b378
https://doi.org/10.1109/tpel.2019.2954322
https://doi.org/10.1109/tpel.2019.2954322
Publikováno v:
IEEE Transactions on Power Electronics. 34:12181-12192
In this paper, we explore the challenges of implementing resonant converters using silicon carbide (SiC) power devices at high frequency: namely, the issue of high parasitic inductance packages and the ability to drive and enhance the mosfet at these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99dc1f6004ef60f528dd7d73181c148
https://doi.org/10.1109/tpel.2019.2904591
https://doi.org/10.1109/tpel.2019.2904591
Publikováno v:
2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::742917bd3b6192ffed3ecab211351e3e
https://doi.org/10.1109/compel52922.2021.9645982
https://doi.org/10.1109/compel52922.2021.9645982
Publikováno v:
Engineering Failure Analysis. 141:106701
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9255dd90dc9033226b95b04b8b94f0
https://doi.org/10.1016/j.engfailanal.2022.106701
https://doi.org/10.1016/j.engfailanal.2022.106701
Publikováno v:
2019 IEEE Applied Power Electronics Conference and Exposition (APEC).
Wide Bandgap (WBG) power semiconductors are being incorporated in an ever widening range of applications. Available Gallium Nitride (GaN) devices have lower voltage ratings than those made of Silicon Carbide (SiC) because commercially available GaN d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a3c192c2cf8daa3d31e6b649e01320
https://doi.org/10.1109/apec.2019.8721931
https://doi.org/10.1109/apec.2019.8721931
Autor:
Zhechi Ye, Xudong Wang
Publikováno v:
2018 21st International Conference on Electrical Machines and Systems (ICEMS).
A behavioral model of SiC MOSFET on hard-switching condition is proposed. The model is based on double pulse test (DPT), in which the SiC MOSFET is combined with a SiC Schottky Barrier Diode (SBD). The nonlinearity of the junction capacitance and par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf73ebab5ca78151cf5c76c1e6652ef
https://doi.org/10.23919/icems.2018.8549465
https://doi.org/10.23919/icems.2018.8549465