Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zhe-Yi Ren"'
Autor:
Chao Li, Ji-Hong Zhao, Xiao-Hang Liu, Zhe-Yi Ren, Yang Yang, Zhan-Guo Chen, Qi-Dai Chen, Hong-Bo Sun
Publikováno v:
IEEE Transactions on Electron Devices. 70:2364-2369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6824e1a3c373dae58e439d9d3e5a23e
https://doi.org/10.1109/ted.2023.3261823
https://doi.org/10.1109/ted.2023.3261823
Publikováno v:
Optical and Quantum Electronics. 55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::324981cd602593485b7033807deb2baf
https://doi.org/10.1007/s11082-023-04556-8
https://doi.org/10.1007/s11082-023-04556-8
The molybdenum-doped black silicon materials were fabricated by using femtosecond laser pulses. The energy level of molybdenum in bandgap of silicon was determined by temperature-dependent Hall effect measurements. By introducing intermediate band in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca4be9a93107e90fbbac769991b7c76a
https://doi.org/10.21203/rs.3.rs-2032687/v1
https://doi.org/10.21203/rs.3.rs-2032687/v1
