Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Zhdan, A. G."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 3-5 (2011)
A new approach to the creation of a long-term random-access memory based on the effect of the electron-ion interaction on Si-MOS-transistors is proposed. The difference in levels of signals «zero» and «unit» depends on the regime of reading, and
Externí odkaz:
https://doaj.org/article/9d195c9b1f634662960b58b2664afd4b
Publikováno v:
Semiconductors. Mar2007, Vol. 41 Issue 3, p357-360. 4p. 2 Charts, 4 Graphs.
Publikováno v:
Semiconductors. Feb2006, Vol. 40 Issue 2, p190-196. 7p. 3 Graphs.
Publikováno v:
Semiconductors. Jun2005, Vol. 39 Issue 6, p666-673. 8p.
Publikováno v:
Instruments & Experimental Techniques. Nov/Dec2004, Vol. 47 Issue 6, p791-798. 8p.
Publikováno v:
Semiconductors. Jun2003, Vol. 37 Issue 6, p661. 6p.
Autor:
Zhdan, A. G.1, Chucheva, G. V.1
Publikováno v:
Instruments & Experimental Techniques. May/Jun2003, Vol. 46 Issue 3, p391-394. 4p.
Publikováno v:
Journal of Applied Physics; 1/1/2001, Vol. 89 Issue 1, p130, 16p, 2 Diagrams, 10 Graphs
Publikováno v:
Semiconductors. Jun2000, Vol. 34 Issue 6, p650. 5p.
Publikováno v:
Semiconductors. Mar2000, Vol. 34 Issue 3, p277. 7p.