Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Zhaoqing Feng"'
Autor:
Tao Zhang, Yixian Shen, Qian Feng, Xusheng Tian, Yuncong Cai, Zhuangzhuang Hu, Guangshuo Yan, Zhaoqing Feng, Yachao Zhang, Jing Ning, Yongkuan Xu, Xiaozheng Lian, Xiaojuan Sun, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)
Abstract In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ide
Externí odkaz:
https://doaj.org/article/0e2ffa171dcb4b59aab15fe7a7ef4e2d
Autor:
Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Hepeng Zhang, Shengrui Xu, Zhihong Liu, Hong Zhou, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 970-975 (2020)
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane. In this work, the effects of piranha cleaning a
Externí odkaz:
https://doaj.org/article/ae74de26bcd44dc98017da8c9f8a1537
Autor:
Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Abstract We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field i
Externí odkaz:
https://doaj.org/article/b53c42216e3b44b9832373ee6da87623
Autor:
Yangyang Gao, Ang Li, Qian Feng, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang, Yue Hao
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 1014 c
Externí odkaz:
https://doaj.org/article/1d115bb2475b4ab493ab0dffc34637e0
Autor:
Ke Zhang, Qian Feng, Lu Huang, Zhuangzhuang Hu, Zhaoqing Feng, Ang Li, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Yue Hao
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 3, Pp 1-8 (2018)
The (InxGa1_x)2O3 photodetectors were fabricated on the single-crystalline (InxGa1_x)2O3 films deposited on sapphire substrate by pulsed laser deposition. The structural and optical properties of the epilayers were investigated using high-resolution
Externí odkaz:
https://doaj.org/article/e823db8dfebb47bcbb4f66dc50f05593
Autor:
Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 815-820 (2018)
In this paper, we report on achieving the first high performance lateral $\beta $ -Ga2O3 Schottky barrier diode (SBD) on sapphire substrate via transferring $\beta $ -Ga2O3 nano-membrane channel from a low dislocation density bulk $\beta $ -Ga2O3 sub
Externí odkaz:
https://doaj.org/article/c3652f9b187748fcbc13a296267a3305
Autor:
Zhe Li, Zhaoqing Feng, Yuwen Huang, Yu Xu, Zeyulin Zhang, Qian Feng, Weidong Zhu, Dazheng Chen, Hong Zhou, Jincheng Zhang, Chunfu Zhang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:3807-3810
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc78f6f7cd47d44e3d53ae3179852490
https://doi.org/10.1109/ted.2022.3177585
https://doi.org/10.1109/ted.2022.3177585
Autor:
Zhe Li, Zhaoqing Feng, Yu Xu, Qian Feng, Weidong Zhu, Dazheng Chen, Hong Zhou, Jincheng Zhang, Chunfu Zhang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:1143-1148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc56ebb07f5578b8293ce1590885bbd1
https://doi.org/10.1109/ted.2022.3145327
https://doi.org/10.1109/ted.2022.3145327
Autor:
Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Zhaoqing Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:1196-1199
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb3c9eaa5b7b684f16186f15ec4190e0
https://doi.org/10.1109/ted.2022.3143472
https://doi.org/10.1109/ted.2022.3143472
Autor:
Jincheng Zhang, Yue Hao, Qian Feng, Chunfu Zhang, Yu Xu, Zhaoqing Feng, Hong Zhou, Weidong Zhu, Dazheng Chen, Zhe Li
Publikováno v:
IEEE Electron Device Letters. 42:545-548
This letter demonstrates a high performance $\beta $ -Ga2O3 solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO2) Gate Dielectric. The SBPT shows a high Photo-to-dark-current ratio ( PDCR ) of ${6.9}\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abccd4e70eff615ec5cb5c441a0736a0
https://doi.org/10.1109/led.2021.3061509
https://doi.org/10.1109/led.2021.3061509