Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Zhaoqiang Bai"'
Autor:
Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-11 (2021)
Designing efficient, fast and low power consumption phase change memories remains a challenge. Aryana et al. propose a strategy to reduce operating currents by manipulating the interfacial thermal resistance between the phase change unit and the elec
Externí odkaz:
https://doaj.org/article/5604de4866a44c3cbb46d9cb810c801e
Autor:
Zhaoqiang Bai, Lei Shen, Yongqing Cai, Qingyun Wu, Minggang Zeng, Guchang Han, Yuan Ping Feng
Publikováno v:
New Journal of Physics, Vol 16, Iss 10, p 103033 (2014)
Employing density functional theory combined with the non-equilibrium Greenʼs function formalism, we systematically investigate the structural, magnetic and magnetoelectric properties of the Co _2 FeAl(CFA)/MgO interface, as well as the spin-depende
Externí odkaz:
https://doaj.org/article/c38fa672bae24819bdf724750e7ab042
Publikováno v:
The Journal of Chemical Physics 138, 154711 (2013)
Charge transfer between metal nanoparticles and the supported TiO2 surface is primarily important for catalytic applications as it greatly affects the catalytic activity and the thermal stability of the deposited nanoparticles on the surface. Herein,
Externí odkaz:
http://arxiv.org/abs/1209.0605
Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Autor:
Eric R. Hoglund, Michael Grobis, Ashutosh Giri, John C. Read, Derek Stewart, Patrick E. Hopkins, David H. Olson, John T. Gaskins, Zhaoqiang Bai, Kiumars Aryana, Joyeeta Nag, James M. Howe, Saikat Mukhopadhyay
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-11 (2021)
Nature Communications
Nature Communications
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bda0e516c59a23d8e67a90adfb193952
http://arxiv.org/abs/2011.05492
http://arxiv.org/abs/2011.05492
Publikováno v:
The Journal of Physical Chemistry C. 120:20914-20921
We present first-principles analysis of the Stark effect of CO adsorbed on an atomically sharp silver asperity, and current versus potential (I–V) characteristics of the Ag-CO-Ag junction. The analysis supports the suggestion that CO-bridged plasmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12709a9bbc76416777678639402f91d2
https://doi.org/10.1021/acs.jpcc.6b02664
https://doi.org/10.1021/acs.jpcc.6b02664
Publikováno v:
Computational Materials Science. 63:178-181
First-principles calculations have been carried out to study effects of Bi Ga heteroantisite defects in GaAs:Bi on the related electronic structures. Our results show that the heteroantisite defect Bi Ga can be formed after the isovalent impurity Bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c17370b8a5fac91256935df26a9ac875
https://doi.org/10.1016/j.commatsci.2012.06.014
https://doi.org/10.1016/j.commatsci.2012.06.014
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc118497affa2099b4dce156f5c3aaea
http://arxiv.org/abs/1411.0779
http://arxiv.org/abs/1411.0779
Publikováno v:
Graphene Optoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e87335a291817ac091bd4a5c3ca5b1
https://doi.org/10.1002/9783527677788.ch7
https://doi.org/10.1002/9783527677788.ch7
Publikováno v:
Nanoscale. 6(3)
Monolayer transition metal dichalcogenides recently emerged as a new family of two-dimensional materials potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of a finite band gap. Many proposed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4f528a0128fdb6808672730219750e8c
https://pubmed.ncbi.nlm.nih.gov/24343306
https://pubmed.ncbi.nlm.nih.gov/24343306
Publikováno v:
Physical review letters. 111(24)
By combining density functional theory, nonequilibrium Green's function formulism and effective-Hamiltonian approaches, we demonstrate strain-engineered surface transport in Si(001), with the complete isolation of the Si surface states from the bulk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2a355d44f289d16127f1d1ecab6a790
https://pubmed.ncbi.nlm.nih.gov/24483685
https://pubmed.ncbi.nlm.nih.gov/24483685