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pro vyhledávání: '"Zhaoheng Yan"'
Autor:
Song Yuan, Zhaoheng Yan, Yanzuo Li, Ying Wang, Qifan Liu, Xinbin Zhan, Xi Jiang, Yanjing He, Xiaowu Gong
Publikováno v:
Micromachines, Vol 15, Iss 6, p 759 (2024)
A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thi
Externí odkaz:
https://doaj.org/article/850d40a02b0146528c74794be208dd9e
