Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Zhaohao, Zhang"'
Autor:
Shuang Liu, Heyi Huang, Yanqing Li, Yadong Zhang, Feixiong Wang, Zhaohao Zhang, Qingzhu Zhang, Jiali Huo, Jiaxin Yao, Jing Wen, Huaxiang Yin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 889-897 (2024)
One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits.
Externí odkaz:
https://doaj.org/article/2360aa6dc38649d9b9e99d00e8220be4
Autor:
Jiawei Hu, Yinglu Li, Xufang Zhang, Yanrong Wang, Jing Zhang, Jiang Yan, Junjie Li, Zhaohao Zhang, Huaxiang Yin, Qianhui Wei, Qifeng Jiang, Shuhua Wei, Qingzhu Zhang
Publikováno v:
Biosensors, Vol 14, Iss 10, p 461 (2024)
In the original publication [...]
Externí odkaz:
https://doaj.org/article/35d504f160da4024a5f8c8db8fc502aa
Autor:
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 11, Pp n/a-n/a (2023)
Artificial synapses are key elements in building bioinspired, neuromorphic computing systems. Ferroelectric field‐effect transistors (FeFETs) with excellent controllability and complementary metal oxide semiconductor (CMOS) compatibility are favora
Externí odkaz:
https://doaj.org/article/49aba2ff74004ff7a5634dd3fc913dcf
Autor:
Zhaohao Zhang, Yudong Li, Jing Xu, Bo Tang, Jinjuan Xiang, Junjie Li, Qingzhu Zhang, Zhenhua Wu, Huaxiang Yin, Jun Luo, Wenwu Wang
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-6 (2022)
Abstract In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer. Furthermore, the subthreshold characteristics
Externí odkaz:
https://doaj.org/article/4bed1d575aeb40c099cad1f7936c5b36
Autor:
Yinglu Li, Shuhua Wei, Enyi Xiong, Jiawei Hu, Xufang Zhang, Yanrong Wang, Jing Zhang, Jiang Yan, Zhaohao Zhang, Huaxiang Yin, Qingzhu Zhang
Publikováno v:
Biosensors, Vol 14, Iss 3, p 144 (2024)
Silicon nanowire field effect (SiNW-FET) biosensors have been successfully used in the detection of nucleic acids, proteins and other molecules owing to their advantages of ultra-high sensitivity, high specificity, and label-free and immediate respon
Externí odkaz:
https://doaj.org/article/ee9a07d3398d46d28733197abd1ccf4a
Autor:
Jie Gu, Qingzhu Zhang, Zhenhua Wu, Yanna Luo, Lei Cao, Yuwei Cai, Jiaxin Yao, Zhaohao Zhang, Gaobo Xu, Huaxiang Yin, Jun Luo, Wenwu Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 35-39 (2022)
A new approach of narrowing sub-fin with little extra process cost for suppressing parasitic-channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet field-effect-transistors (NS-FETs) is proposed. The proposed sub-fin
Externí odkaz:
https://doaj.org/article/73ee45be99644d4d9707828aa66e46c7
Autor:
Jiawei Hu, Yinglu Li, Xufang Zhang, Yanrong Wang, Jing Zhang, Jiang Yan, Junjie Li, Zhaohao Zhang, Huaxiang Yin, Qianhui Wei, Qifeng Jiang, Shuhua Wei, Qingzhu Zhang
Publikováno v:
Biosensors, Vol 13, Iss 6, p 645 (2023)
Acute kidney injury (AKI) is a frequently occurring severe disease with high mortality. Cystatin C (Cys-C), as a biomarker of early kidney failure, can be used to detect and prevent acute renal injury. In this paper, a biosensor based on a silicon na
Externí odkaz:
https://doaj.org/article/8abf21f68d63437d82c4bd1ddb1538f6
Autor:
Zhaohao Zhang, Yaoguang Liu, Qianhui Wei, Qingzhu Zhang, Junjie Li, Feng Wei, Zhenhua Wu, Huaxiang Yin
Publikováno v:
Electronics Letters, Vol 57, Iss 25, Pp 992-994 (2021)
Abstract A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achiev
Externí odkaz:
https://doaj.org/article/abf56457fc5a45ff9a73d57d23e092b5
Autor:
Jiali Huo, Zhaohao Zhang, Yadong Zhang, Fan Zhang, Gangping Yan, Guoliang Tian, Haoqing Xu, Guohui Zhan, Gaobo Xu, Qingzhu Zhang, Huaxiang Yin, Zhenhua Wu
Publikováno v:
IEEE Transactions on Electron Devices. 70:3071-3075
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c765ba09a63d899f277f0afd4267d1b
https://doi.org/10.1109/ted.2023.3269403
https://doi.org/10.1109/ted.2023.3269403
Publikováno v:
IEEE Transactions on Electron Devices. 70:1029-1033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4689871909aee16e73b9d90e4620b0e4
https://doi.org/10.1109/ted.2023.3239330
https://doi.org/10.1109/ted.2023.3239330