Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Zhaoan Yu"'
Autor:
Danian Dong, Woyu Zhang, Yuanlu Xie, Jinshan Yue, Kuan Ren, Hongjian Huang, Xu Zheng, Wen Xuan Sun, Jin Ru Lai, Shaoyang Fan, Hongzhou Wang, Zhaoan Yu, Zhihong Yao, Xiaoxin Xu, Dashan Shang, Ming Liu
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 10, Pp n/a-n/a (2024)
Reservoir computing (RC) possesses a simple architecture and high energy efficiency for time‐series data analysis through machine learning algorithms. To date, RC has evolved into several innovative variants. The next generation reservoir computing
Externí odkaz:
https://doaj.org/article/ccf274fc05ba4f94bfb4dcb1dd3a1470
Autor:
Qing Xi, Guangze Yang, Xue He, Hao Zhuang, Li Li, Bing Lin, Lingling Wang, Xianyang Wang, Chunqiang Fang, Qiurui Chen, Yongjie Yang, Zhaoan Yu, Hao Zhang, Wenqian Cai, Yan Li, Han Shen, Li Liu, Rongxin Zhang
Publikováno v:
Advanced Science, Vol 11, Iss 34, Pp n/a-n/a (2024)
Abstract Tumor immune evasion relies on the crosstalk between tumor cells and adaptive/innate immune cells. Immune checkpoints play critical roles in the crosstalk, and immune checkpoint inhibitors have achieved promising clinical effects. The long n
Externí odkaz:
https://doaj.org/article/4926f3f1e03f430d8752d516c6d6266b
Autor:
Xu Zheng, Lizhou Wu, Yuanlu Xie, Jinru Lai, Wenxuan Sun, Jie Yu, Danian Dong, Zhaoan Yu, Xiaoyong Xue, Bing Chen, Yan Yang, Xiaoxin Xu, Qi Liu, Ming Liu
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In this work, a machine learning‐assisted prediction model is proposed to analyze the reliability issues in the 28 nm resistive random access memory (RRAM) chip with raw data measured from RRAM test chip. The neural network of long‐short
Externí odkaz:
https://doaj.org/article/8d0e7e76f7a649c7bd6b19023071e947
Autor:
Wei Guo, Guangzhong Jian, Weibing Hao, Feihong Wu, Kai Zhou, Jiahong Du, Xuanze Zhou, Qiming He, Zhaoan Yu, Xiaolong Zhao, Guangwei Xu, Shibing Long
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 933-941 (2022)
β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and DC-DC boost converter simulations. The reverse recovery time ( $t_{{\mathrm {rr}}}$ ) of the
Externí odkaz:
https://doaj.org/article/ee1a96291d7e4275ac7a069a7d04e499
Autor:
Lingli Cheng, Lili Gao, Xumeng Zhang, Zuheng Wu, Jiaxue Zhu, Zhaoan Yu, Yue Yang, Yanting Ding, Chao Li, Fangduo Zhu, Guangjian Wu, Keji Zhou, Ming Wang, Tuo Shi, Qi Liu
Publikováno v:
Frontiers in Neuroscience, Vol 16 (2022)
Cochleas are the basis for biology to process and recognize speech information, emulating which with electronic devices helps us construct high-efficient intelligent voice systems. Memristor provides novel physics for performing neuromorphic engineer
Externí odkaz:
https://doaj.org/article/23f9f3c1381a426aa61617cdc6078dfa
Autor:
Working Group on Setting up Standardization Guidelines of Cervical Spondylosis (Xiangbi) in Traditional Chinese Medicine Rehabilitation, Wei ZHANG, Jinxiang LI, Bidan LOU, Yong YE, Wenying SHI, Hongliang LI, Zhaoan YU, Kangsheng LONG, Ran PENG, Jing TANG, Yanzhen XIONG
Publikováno v:
康复学报, Vol 30, Pp 337-342 (2020)
Cervical spondylosis is a disease in which degenerative changes of the cervical intervertebral disc and its secondary pathological changes involve a series of clinical manifestations. It is one of the common clinical diseases and the frequently-occur
Externí odkaz:
https://doaj.org/article/68d8be40279044509a2558fb60398131
Autor:
Yuan Qin, Li‐Heng Li, Zhaoan Yu, Feihong Wu, Danian Dong, Wei Guo, Zhongfang Zhang, Jun‐Hui Yuan, Kan‐Hao Xue, Xiangshui Miao, Shibing Long
Publikováno v:
Advanced Science, Vol 8, Iss 20, Pp n/a-n/a (2021)
Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐p
Externí odkaz:
https://doaj.org/article/f1204b88532c40e8a0f6c25cf1918c31
Autor:
Feihong Wu, Yuangang Wang, Guangzhong Jian, Guangwei Xu, Xuanze Zhou, Wei Guo, Jiahong Du, Qi Liu, Shaobo Dun, Zhaoan Yu, Yuanjie Lv, Zhihong Feng, Shujun Cai, Shibing Long
Publikováno v:
IEEE Transactions on Electron Devices. 70:1199-1205
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc97408e4a86c7038edd03763eda30b
https://doi.org/10.1109/ted.2023.3239062
https://doi.org/10.1109/ted.2023.3239062
Autor:
Linfang Wang, Qi Liu, Xiping Jiang, Chixiao Chen, Chenggao Zhang, Zhaoan Yu, Chunmeng Dou, Junjie An, Zhihong Yao, Xumeng Zhang, Tuo Shi, Jing Liu, Zuheng Wu, Ye Wang, Wang Xuehong, Meng-Fan Chang
Publikováno v:
IEEE Transactions on Electron Devices. 68:4933-4937
In this work, we present a four-transistor-two-resistor (4T2R) ternary content addressable memory (TCAM) bit cell based on the resistive memory (RRAM), comprising the conventional two-transistor-two-resistor (2T2R) cell with two additional comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a6a4e6617eec76580fafaee235c654
https://doi.org/10.1109/ted.2021.3107497
https://doi.org/10.1109/ted.2021.3107497
Autor:
Zhaoan Yu, Danian Dong, Xiaoxin Xu, Juin J. Liou, Jiayou Song, Jing Liu, Xu Zheng, Xiaonan Yang
Publikováno v:
IEEE Electron Device Letters. 42:30-33
We demonstrated a resistive random access memory (RRAM) based embedded non-volatile memory (e-NVM) solution integrated in the 0.13 $\mu $ m partially depleted silicon on insulator (PD-SOI) process. The memory devices show excellent reliability. It ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd15e9882d10cc54b3dc63842a4701d5
https://doi.org/10.1109/led.2020.3037072
https://doi.org/10.1109/led.2020.3037072