Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Zhao Si Ping"'
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
Conventional cross-sectional imaging on suspended Si-based MEMS structures requires decapsulation, physical cross-sectioning, and pre-imaging sample preparation before optical and SEM inspection. In this work, a non-destructive workflow based on 3D X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2165db799836a514f72b3960e6081b5a
https://doi.org/10.1109/cstic52283.2021.9461554
https://doi.org/10.1109/cstic52283.2021.9461554
Autor:
Loh Sock Khim, Ang Ghim Boon, Ng Hui Peng, Zhao Si Ping, Neo Soh Ping, Chen Changqing, Ng Peng Tiong, Yip Kim Hong, Angela Teo
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a low yield case with a specific failing pattern in the wafers and related to a systematic front-end defect in DNWELL from a specific location and structure in the device was discussed. This paper also illustrates and put emphasis on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ccdc40c621adbba6375bcd4b188d38
https://doi.org/10.1109/ipfa.2013.6599149
https://doi.org/10.1109/ipfa.2013.6599149
Autor:
Chen Changqing, Teo Kim Hong, Yogaspari, Liu Binghai, Lee Gek Li, Robin Tan, Tee Irene, Chen Ye, Mo Zhiqiang, Ang Ghim Boon, Yao Yuan, Zhao Si Ping
Publikováno v:
International Symposium for Testing and Failure Analysis.
Abnormal inline defects were caught after nitride spacer etching processes. Detailed MEBES layout checking and inline SEM inspection revealed that such defects always appeared at the boundaries in between PFETs and NFETs regions. The microstructure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de068e2587444f5410fd12980720667
https://doi.org/10.31399/asm.cp.istfa2012p0574
https://doi.org/10.31399/asm.cp.istfa2012p0574
Publikováno v:
International Symposium for Testing and Failure Analysis.
Electron-beam induced radiation damage can give rise to large structural collapse and deformation of low k and ultra low k IMD in semiconductor devices, posing great challenges for failure analysis by electron microscopes. Such radiation damage has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efdeb8a7225562be82187a6c2c9fb9dd
https://doi.org/10.31399/asm.cp.istfa2012p0542
https://doi.org/10.31399/asm.cp.istfa2012p0542
Akademický článek
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Publikováno v:
2006 IEEE International Conference on Semiconductor Electronics.
In this paper, an attempt is made to highlight a new SEM based technique that was used to detect pinholes in the as- deposited/as-grown dielectrics. The fundamental principle governing the technique is discussed. This technique is benchmarked against
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42a6ac425b0b9ff6bcea19e3c118257
https://doi.org/10.1109/smelec.2006.380729
https://doi.org/10.1109/smelec.2006.380729
Publikováno v:
2006 IEEE International Conference on Semiconductor Electronics.
Copper as a metal of choice for interconnection purposes, needs damascene approach to realize the interconnect formation. This approach needs etch stop layers to form via and trench. Metal and dielectric barriers are also needed to prevent copper fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985fcf6271288a0d0995bb90e6531849
https://doi.org/10.1109/smelec.2006.380730
https://doi.org/10.1109/smelec.2006.380730
Autor:
Liu, Binghai, Irene, Tee, Sien, Seah Soo, Ye, Chen, Elizabeth, Jie, Zhu, Er, Eddie, Zhao, Si Ping, Lam, Jeffery
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2015, p88-91, 4p
Autor:
Liu, Binghai, Er, Eddie, Zhao, Si Ping, Chen, Changqing, Boon, Ang Ghim, Takahashi, Kunihiko, Subbu, Chivukula, Lam, Jeffrey
Publikováno v:
Proceedings of the 21th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2014, p58-61, 4p