Výsledky vyhledávání - "Zhao Lichuan"

Development and Application of the Integrated Pipe String of Free Delivery Releasing Blowout Prevention and Anchoring for Screw Pump Wells

Autor: Song Xingliang, Zhao Xuyang, Pingan Zhang, Zhu Shaogong, Wang Pengcheng, Yao Fei, Dekui Xu, Zhao Lichuan

Publikováno v: Springer Series in Geomechanics and Geoengineering ISBN: 9789811524844

For current downhole releasing blowout prevention technology of the Y445 packer with sliding sleeve switch used in mechanical recovery wells has the problems of low blowout prevention success rate, poor long-term reliability and complicated procedure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc6a22248a62070f703e2307a7f52816
https://doi.org/10.1007/978-981-15-2485-1_246

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Experimental Research on Corrosion Resistant Rubber Based on Supercritical CO2 Injection Process

Autor: Sun Jiang, He Qing, Lin Zhongchao, Zhao Lichuan, Xu Hao

Publikováno v: Proceedings of the International Field Exploration and Development Conference 2018 ISBN: 9789811371264

In the CO2 injection process, the CO2 in the supercritical state and the H2S gas produced in the well have strong corrosion ability to the rubber material in the tool, therefore, it is necessary to study the rubber material suitable for the supercrit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51be434a91bf16c984e4531f17311b7b
https://doi.org/10.1007/978-981-13-7127-1_190

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Research on the Technology of Integral Water Searching and Plugging for Two-Stage Casing Gas-Lift Wells in Sudan Oilfield

Autor: Zhao Lichuan, Zhao Xuyang, He Qing, Zhang Ping'an, Song Xingliang, Sun Jiang, Liu Yun, Xu Dekui, Gao Fei, Liu Yuchuan, Xu Hao, Cai Meng, Lin Zhongchao, Liu Chongjiang, Wang Pengcheng

Publikováno v: Journal of Physics: Conference Series. 1637:012132

The combination structure of 9 5 8 ” and 5 1 2 ” casing is used in some gas-lift wells in Sudan Oilfield. The existing mechanical water searching and plugging technology cannot meet the technical requirements of this type of well, so a integral w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b437d7c8b156d01025abe63598d31c4
https://doi.org/10.1088/1742-6596/1637/1/012132

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A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs

Autor: Zhao Lichuan, Zhang Qingzhu, Tang Zhaoyun, Yan Jiang, Yang Pengpeng, Feng Shuai, Wu Cinan

Publikováno v: Journal of Semiconductors. 36:046001

Extremely thin silicon on insulator p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteristic parameters acquired by TCAD simulation a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05aa7ad49496dd496e0903b6cc5fd3ad
https://doi.org/10.1088/1674-4926/36/4/046001

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Periodical

Throttle characteristics of multi-stage circumfluence nozzle during the separate-layer injection of CO2

Autor: Wang, Haizhu, Li, Gensheng, Zhao, Lichuan, Wang, Youwen, Liu, Yun, Liu, Qingling, Wang, Meng, Gao, Fei, Cai, Meng

Publikováno v: Petroleum; June 2018, Vol. 4 Issue: 2 p187-197, 11p

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On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

Autor: Zhu Huilong, Xu Miao, Ye Tianchun, Zhao Chao, Wu Hao, Chen Dapeng, Wan Guangxing, Tong Xiaodong, Zhao Lichuan

Publikováno v: Journal of Semiconductors. 35:114006

The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc880701f8d724ae69c01c5bc042d519
https://doi.org/10.1088/1674-4926/35/11/114006

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A vertically integrated capacitorless memory cell

Autor: Wu Hao, Zhao Lichuan, Zhong Huicai, Tong Xiaodong, Wang Ming

Publikováno v: Journal of Semiconductors. 34:084005

A two-port capacitorless PNPN device with high density, high speed and low power memory fabricated using standard CMOS technology is presented. Experiments and calibrated simulations were conducted which prove that this new memory cell has a high ope

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::795129d69b6c9aba4b5f1c5db3d0f3ce
https://doi.org/10.1088/1674-4926/34/8/084005

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