Zobrazeno 1 - 10
of 217
pro vyhledávání: '"Zhao Deyin"'
Autor:
Kumar Kalapala Akhil Raj, Liu Dong, Cho Sang June, Park Jeongpil, Zhao Deyin, Albrecht John D., Moody Baxter, Ma Zhenqiang, Zhou Weidong
Publikováno v:
Opto-Electronic Advances, Vol 3, Iss 4, Pp 190025-1-190025-6 (2020)
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al
Externí odkaz:
https://doaj.org/article/f0d56e4bf7b445e583ceaa89ff012830
Autor:
Zhang, Yuansu1 (AUTHOR), Zhao, Deyin2 (AUTHOR), Si, Xiaomao3 (AUTHOR), Yue, Xiaoxing1 (AUTHOR), Chen, Jinhui1 (AUTHOR), Lu, Yongming1 (AUTHOR), Qiu, Peng4 (AUTHOR), Lu, Xinwu4 (AUTHOR), Yang, Xinrui4 (AUTHOR) cinder_13@126.com
Publikováno v:
Scientific Reports. 12/28/2024, Vol. 14 Issue 1, p1-14. 14p.
Autor:
Liu, Kun 1, 9, Zhao, Deyin 2, 9, Feng, Lvfan 3, Zhang, Zhaoxuan 4, Qiu, Peng 5, Wu, Xiaoyu 5, Wang, Ruihua 5, Hussain, Azad 6, Uzokov, Jamol 7, Han, Yanshuo 4, 8, ∗
Publikováno v:
In Hellenic Journal of Cardiology August 2024
Autor:
Liu, Dong, Cho, Sang June, Park, Jeongpil, Seo, Jung-Hun, Dalmau, Rafael, Zhao, Deyin, Kim, Kwangeun, Kim, Munho, Lee, In-Kyu, Albrecht, John D., Zhou, Weidong, Moody, Baxter, Ma, Zhenqiang
Publikováno v:
published: Appl. Phys. Lett. 112, 081101 (2018)
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured.
Externí odkaz:
http://arxiv.org/abs/1708.03973
Autor:
Cho, Sang June, Liu, Dong, Seo, Jung-Hun, Dalmau, Rafael, Kim, Kwangeun, Park, Jeongpil, Zhao, Deyin, Yin, Xin, Jung, Yei Hwan, Lee, In-Kyu, Kim, Munho, Wang, Xudong, Albrecht, John D., Moody, Weidong Zhou Baxter, Ma, Zhenqiang
As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and
Externí odkaz:
http://arxiv.org/abs/1707.04223
Autor:
Zhao, Deyin a, Wang, Qian a, Lu, Fengxia a, Bie, Xiaomei a, Zhao, Haizhen a, Lu, Zhaoxin a, ∗, Lu, Yingjian b, ∗∗
Publikováno v:
In LWT 15 January 2022 154
Autor:
Zhao, Deyin a, †, Li, Yinsen b, †, Xu, Mengyao a, Li, Zhimin a, Zhang, Hao b, ⁎, Yu, Li b, ⁎⁎
Publikováno v:
In Journal of Molecular Liquids 1 December 2021 343
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Publikováno v:
In Procedia Engineering 2017 205:3448-3455
Publikováno v:
In Energy 1 May 2016 102:660-668