Zobrazeno 1 - 10
of 360
pro vyhledávání: '"Zhao, Yuji"'
Autor:
Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Kargar, Fariborz, Zhao, Yuji, Fu, Houqiang, Balandin, Alexander A.
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at eleva
Externí odkaz:
http://arxiv.org/abs/2307.15659
Autor:
Biswas, Abhijit, Alvarez, Gustavo A., Li, Tao, Christiansen-Salameh, Joyce, Jeong, Eugene, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Gray, Tia, Zhang, Xiang, Pieshkov, Tymofii S., Kannan, Harikishan, Elkins, Jacob, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Pate, Bradford B., Ivanov, Tony G., Zhao, Yuji, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Phys. Rev. Materials 7, 094602 (2023)
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremel
Externí odkaz:
http://arxiv.org/abs/2305.13306
Autor:
Biswas, Abhijit, Xu, Rui, Alvarez, Gustavo A., Zhang, Jin, Christiansen-Salameh, Joyce, Puthirath, Anand B., Burns, Kory, Hachtel, Jordan A., Li, Tao, Iyengar, Sathvik Ajay, Gray, Tia, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Ivanov, Tony, Pate, Bradford B., Zhao, Yuji, Zhu, Hanyu, Tian, Zhiting, Rubio, Angel, Ajayan, Pulickel M.
Publikováno v:
Adv. Mater. 2023, 2304624
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers
Externí odkaz:
http://arxiv.org/abs/2304.12312
Autor:
Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Rumyantsev, Sergey, Zhao, Yuji, Fu, Houqiang, Goodnick, Stephen, Nemanich, Robert, Balandin, Alexander A.
We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate cu
Externí odkaz:
http://arxiv.org/abs/2304.04744
Autor:
Biswas, Abhijit, Xu, Mingfei, Fu, Kai, Zhou, Jingan, Xu, Rui, Puthirath, Anand B., Hachtel, Jordan A., Li, Chenxi, Iyengar, Sathvik Ajay, Kannan, Harikishan, Zhang, Xiang, Gray, Tia, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Ruzmetov, Dmitry A., Shah, Pankaj B., Ivanov, Tony, Zhu, Hanyu, Zhao, Yuji, Ajayan, Pulickel M.
Publikováno v:
Appl. Phys. Lett. 121, 092105 (2022)
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser
Externí odkaz:
http://arxiv.org/abs/2209.00643
Autor:
Biswas, Abhijit, Maiti, Rishi, Lee, Frank, Chen, Cecilia Y., Li, Tao, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Gray, Tia, Saadi, Md Abid Shahriar Rahman, Elkins, Jacob, Birdwell, A. Glen, Neupane, Mahesh R., Shah, Pankaj B., Ruzmetov, Dmitry A., Ivanov, Tony G., Vajtai, Robert, Zhao, Yuji, Gaeta, Alexander L., Tripathi, Manoj, Dalton, Alan, Ajayan, Pulickel M.
Publikováno v:
Nanoscale Horizons, 2023, 8, 641-651
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budge
Externí odkaz:
http://arxiv.org/abs/2208.09468
Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature
Autor:
Ghosh, Subhajit, Fu, Kai, Kargar, Fariborz, Rumyantsev, Sergey, Zhao, Yuji, Balandin, Alexander A.
Publikováno v:
Appl. Phys. Lett., 119, 243505 (2021)
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most o
Externí odkaz:
http://arxiv.org/abs/2112.06373
Autor:
He, Jinghan, Chen, Hong, Hu, Jin, Zhou, Jingan, Zhang, Yingmu, Kovach, Andre, Sideris, Constantine, Harrison, Mark C., Zhao, Yuji, Armani, Andrea M.
Although the first lasers invented operated in the visible, the first on-chip devices were optimized for near-infrared (IR) performance driven by demand in telecommunications. However, as the applications of integrated photonics has broadened, the wa
Externí odkaz:
http://arxiv.org/abs/2006.08041
Autor:
Zhou, Jingan, Chen, Hong, Fu, Houqiang, Fu, Kai, Deng, Xuguang, Huang, Xuanqi, Yang, Tsung-Han, Montes, Jossue A., Yang, Chen, Qi, Xin, Zhang, Baoshun, Zhang, Xiaodong, Zhao, Yuji
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were comprehensiv
Externí odkaz:
http://arxiv.org/abs/1910.10880