Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Zhanna Smagina"'
Publikováno v:
Nanomaterials; Volume 12; Issue 9; Pages: 1407
The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thick
Autor:
Sergey A. Dyakov, A. V. Dvurechenskii, Sergey M. Sergeev, Vladimir Zinovyev, Artem V. Peretokin, S. A. Rudin, M. V. Stepikhova, A. V. Novikov, A. V. Nenashev, Zhanna Smagina, E. E. Rodyakina
Publikováno v:
Nanomaterials
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 909, p 909 (2021)
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 909, p 909 (2021)
A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre
Autor:
S. A. Rudin, Vladimir Zinovyev, Anatolii Dvurechenskii, E. E. Rodyakina, A. V. Novikov, M. V. Stepikhova, Zhanna Smagina
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
Experimental and calculated data on the creation of ordered groups of Ge (Si) quantum dots on structured SOI substrates are presented. The luminescence properties of the obtained structures, including those embedded in photonic crystals, are investig
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
This work devotes to a comparative study of the photoluminescence of Ge/Si epitaxial structures with quantum dots created with using ion beam irradiation and structures with Ge nanoclusters formed as a result of the implantation of Ge ions into silic
Autor:
S. A. Rudin, A. V. Dvurechenskii, P. A. Kuchinskaya, A. V. Nenashev, Vladimir Zinovyev, Zhanna Smagina, P. L. Novikov
Publikováno v:
physica status solidi c. 13:882-885
Joint experimental and theoretical study of Ge nanoislands growth on groove-patterned Si(001) substrate prepared by ion-beam-assisted nanoimprint lithography is carried out. Prepatterning procedure includes ion irradiation of Si substrate through imp
Publikováno v:
physica status solidi c. 14:1700200
Large-area periodical pattern on Si(100) was fabricated using combination of nanoimprint lithography and ion irradiation through mask. Ordered structures with grooves and ridges were prepared by the selective etching of regions amorphized by ion irra
Autor:
V.G. Kesler, V. A. Armbrister, E.V. Spesivtzev, A. V. Dvurechenskii, Zhanna Smagina, V. V. Kirienko, P. L. Novikov, Anton K. Gutakovskii, N. P. Stepina
Publikováno v:
Thin Solid Films. 517:313-316
A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO2, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate
Autor:
V. A. Armbrister, Vladimir Zinovyev, A. V. Dvurechenskii, P. A. Kuchinskaya, P. L. Novikov, V. A. Seleznev, Zhanna Smagina, Natalya Stepina
Publikováno v:
physica status solidi (a). 210:1522-1524
Experimental study of Ge nanoislands growth on groove-patterned Si(001) substrate formed by ion-beam-assisted nanoimprint lithography is carried out. Prepatterning procedure includes ion irradiation of Si substrate through imprinted resist mask and s
Autor:
Aleksandr V. Shklyaev, A. V. Nenashev, Olga Borodavchenko, A. V. Dvurechenskii, A. V. Mudryi, S. V. Trubina, Vadim Zhivulko, A. F. Zinovieva, Simon Erenburg, S. A. Teys, Vladimir Zinovyev, Zhanna Smagina
Publikováno v:
physica status solidi c. 14:1700187
The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200–250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40–50 nm) laterally ordered QDs grown on the nanodisk surface are stu
Publikováno v:
2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.
The effect of ion beam irradiation on nucleation and growth of three-dimensional (3D) Ge islands on Si (100) substrate was investigated. It was found that pulsed ion-beam action during heteroepitaxy leads to the increase of 3D islands density, decrea