Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Zhangying Huang"'
Autor:
Jinhong Dai, Zhangying Huang, Yadong Jiang, Dan Wang, Xiang Dong, Zhiming Wu, Chunhui Ji, Zihao Xiang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:4150-4160
In this work, we investigate the improvement of the thermochromic properties of W-doped vanadium dioxide (VO2) films induced by annealing temperatures. Firstly, W-doped VO2 films with different W contents were successfully prepared on quartz substrat
Autor:
Yadong Jiang, Zihao Xiang, Zhiming Wu, Wen Xu, Chunhui Ji, Xiang Dong, Yuanlin Shi, Jinhong Dai, Fan Zhang, Zhangying Huang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:1715-1721
Vanadium dioxide (VO2) is a promising candidate for implementing switching modulation devices due to its well-known metal-to-insulator transition (MIT). In addition, the application of VO2 on modulation devices requires a narrow hysteresis loop width
Autor:
Chunhui Ji, Xiang Dong, Dan Wang, Xuefei Wu, Zhiming Wu, Yuanlin Shi, Zihao Xiang, Jinhong Dai, Zhangying Huang, Yadong Jiang
Publikováno v:
Applied Physics A. 126
Vanadium dioxide (VO2) is an ideal material for smart windows, which can initiate an automatic reversible metal-to-insulator transition from tetragonal to monoclinic structure at the transition temperature (Tc) of 68 °C, resulting in a large differe
Autor:
Yadong Jiang, Tao Wang, Zhangying Huang, Xiangdong Xu, Xiang Dong, Jinhong Dai, Wenyu Chen, Zihao Xiang, Yuanlin Shi, Yuanjie Su, Zhiming Wu
Publikováno v:
Applied Surface Science. 562:150138
In this study, vanadium oxide (VOx) thin films were prepared by reactive pulsed DC magnetron sputtering (PDMS). The influence of pulse frequency (Fp) on the deposition process and properties of VOx films was investigated. The obtained results indicat
Autor:
Yadong Jiang, Jinhong Dai, Zihao Xiang, Wen Xu, Zhiming Wu, Zhangying Huang, Yuanlin Shi, Chunhui Ji, Jun Wang, Xiang Dong
Publikováno v:
Applied Surface Science. 517:146101
Vanadium dioxide (VO2), which can initiate an automatic reversible metal-to-insulator transition (MIT) from tetragonal to monoclinic structure at the transition temperature (Tc) of 68 °C, is a promising candidate to realize electronic devices due to