Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Zhangxun Mo"'
Publikováno v:
Nano Research. 15:8451-8457
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f94b1fb3c91afe5fd7f1ab6661c703
https://doi.org/10.1007/s12274-022-4493-1
https://doi.org/10.1007/s12274-022-4493-1
Autor:
Mianzeng Zhong, Baocheng Cui, Zhangxun Mo, Yali Yu, Qinglin Xia, Fen Zhang, Ziqi Zhou, Le Huang, Bo Li, Juehan Yang, Jun He, Zhongming Wei
Publikováno v:
Applied Physics Reviews. 10
Controlling the manner of band alignment of heterostructures increases design freedom with novel physical properties, enables the design of new functional devices, and improves device performance, but the lattice matching limits the diversity of trad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::933b289b047c2cd8580d3c15473aa44a
https://doi.org/10.1063/5.0147499
https://doi.org/10.1063/5.0147499
Autor:
Fen Zhang, Zhangxun Mo, Danyang Wang, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, Mianzeng Zhong
Publikováno v:
Applied Physics Letters. 121:191102
Polarimetric photodetectors with broadband and fast response have important applications in the military and civilian fields. Alloying of semiconductors is a good strategy to regulate its electronic band structure which broadens the photoresponse ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98aabeb31ba5a1391530a01a4d3e7686
https://doi.org/10.1063/5.0117128
https://doi.org/10.1063/5.0117128
Publikováno v:
Journal of Physics D: Applied Physics. 55:444006
Due to the energy transfer at the interface, the quantum dots (QDs) modification of two-dimensional (2D) materials is an effective and convenient way to improve their optoelectronic properties. In this work, we have studied the influence of the CdSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9355d75d5950aec816fb5930171dd16d
https://doi.org/10.1088/1361-6463/ac8ebf
https://doi.org/10.1088/1361-6463/ac8ebf
Autor:
Danyang Wang, Feiping Zhao, Fen Zhang, Zhangxun Mo, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, Mianzeng Zhong
Publikováno v:
Applied Physics Letters. 121:061104
Topological insulators are considered as one of the preferred materials for high-performance optoelectronic devices due to their small bulk bandgaps and ultra-high carrier mobility. However, the existence of their unique Dirac like surface states mak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff4a830a95a6183e7771454b088d465
https://doi.org/10.1063/5.0102450
https://doi.org/10.1063/5.0102450
Autor:
Zhangxun Mo, Fen Zhang, Danyang Wang, Baocheng Cui, Qinglin Xia, Bo Li, Jun He, Mianzeng Zhong
Publikováno v:
Applied Physics Letters. 120:201105
Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range of the corresponding optoelectronic devices. In addition, building a Schottky diode and improving the crystal qual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a000aa943a364e2ddc2bd595b3317c
https://doi.org/10.1063/5.0093115
https://doi.org/10.1063/5.0093115
Autor:
Shun Shi, Ya Feng, Bailing Li, Hongmei Zhang, Qiuqiu Li, Zhangxun Mo, Xinyun Zhou, Zheyi Lu, Weiqi Dang, Xiaohui Lin, Liqiang Zhang, Zucheng Zhang, Wei Deng, Jia Li, Mianzeng Zhong, Bo Li, Xidong Duan
Publikováno v:
Applied Physics Letters. 120:081101
Two-dimensional materials and their heterojunctions have received extensive attention in fundamental and applied research of photonics, electronics, and spintronics. Herein, we stacked SnS2, FePS3, and graphene (Gr) nanosheets into SnS2/FePS3/Gr van
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8b7169c3a6af836ccaa5bc781b79cae
https://doi.org/10.1063/5.0083272
https://doi.org/10.1063/5.0083272