Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Zhangda Lin"'
Autor:
Naigui Shang, Cheehow Lee, Zhangda Lin, Shuit-Tong Lee, I. Bello, Ning Wang, Liang-Sheng Liao
Publikováno v:
Physical Review B. 62:17134-17137
Surface passivation is introduced to suppress the deleterious effect of Si surface oxides and thus enhance diamond heteroepitaxial nucleation. Surface composition and diamond nucleation and growth on H-, Br-, and I-passivated Si surfaces were studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8987c07d8be47b66405ff49927d7026
https://doi.org/10.1103/physrevb.62.17134
https://doi.org/10.1103/physrevb.62.17134
Publikováno v:
Diamond and Related Materials. 9:1691-1695
The synthesis of thin diamond films using various chemical vapor deposition methods has received significant attention in recent years due to the: unique characteristic of diamond, which make it an attractive candidate for a wide range of application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b1f46c94c170c5539cb1e10a0701ab2
https://doi.org/10.1016/s0925-9635(00)00301-0
https://doi.org/10.1016/s0925-9635(00)00301-0
Publikováno v:
Diamond and Related Materials. 9:1708-1711
Micro-Raman scattering and photoluminescence spectra are implemented to investigate the characteristics of heavily boron-doped polycrystalline and homoepitaxial diamond films. Large differences on peak position and peak shape are observed between dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::290034300ed092441cdcf886bab8e525
https://doi.org/10.1016/s0925-9635(00)00302-2
https://doi.org/10.1016/s0925-9635(00)00302-2
Autor:
Zhangda Lin, Hong-Xia Zhang, Ying-Bing Jiang, Pei-Ran Zhu, Qingbo Meng, K.A. Feng, Yun-Jie Fei
Publikováno v:
Applied Surface Science. 150:43-46
Diamond films were doped by boron ion-implantation with the energy of 120 keV. The implantation dose ranged from 10(14) to 10(17) cm(-2). After the implantation, the diamond films were annealed at different temperatures (600-750 degrees C) for differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d545af1ba0dc5d5875120889a20162
https://doi.org/10.1016/s0169-4332(99)00153-1
https://doi.org/10.1016/s0169-4332(99)00153-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:3138-3141
While great interest has been focused on low-temperature plasma chemical vapor deposition, the pulsed high-temperature and high-density plasma beam was utilized to enhance diamond nucleation on Si substrate without damaging the smoothness of Si surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935e64e2e2db589d798d2d3986f37be2
https://doi.org/10.1116/1.581472
https://doi.org/10.1116/1.581472
Publikováno v:
Chemical Physics Letters. 289:200-204
The reaction of atomic hydrogen with a C2H2-covered Si surface was studied using high-resolution electron-energy-loss spectroscopy, low-energy electron diffraction and Auger electron spectroscopy. The findings were that atomic hydrogen broke up the C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f0dc1e96af12d02524201d88b4f2a4
https://doi.org/10.1016/s0009-2614(98)00380-7
https://doi.org/10.1016/s0009-2614(98)00380-7
Publikováno v:
physica status solidi (a). 164:757-765
Single-chain single crystals of isotactic polystyrene and poly(ethylene oxide) were studied by using transmission electron microscopy, high resolution electron microscopy, electron diffraction. Single-chain single crystals were prepared by spreading
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01e6c8992417c73bbb52e550302f840
https://doi.org/10.1002/1521-396x(199712)164:2<757::aid-pssa757>3.0.co
https://doi.org/10.1002/1521-396x(199712)164:2<757::aid-pssa757>3.0.co
Publikováno v:
Applied Surface Science. 120:94-98
The surface structures of the Si(113)-(1 X 1), Si(113)-(3 X 1) and Si(113)-(3 X 2) have been studied theoretically by means of an ab initio quantum chemical CNDO method. We address not only the importance of the surface energy but also the energy min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d45ffd297d7a72341ade5db18e1aac
https://doi.org/10.1016/s0169-4332(97)00221-3
https://doi.org/10.1016/s0169-4332(97)00221-3
Publikováno v:
Physical Review B. 55:15937-15941
Using extraordinarily low pressure (0.1-1 Torr) we obtained high-density nucleation of diamond on mirror-polished silicon in a hot-filament chemical vapor deposition (HF-CVD) system. A diamond nuclei density as high as 10(10)-10(11) cm(-2) was achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58838bfb5c0351e19b8bf4920580c044
https://doi.org/10.1103/physrevb.55.15937
https://doi.org/10.1103/physrevb.55.15937
Publikováno v:
physica status solidi (a). 160:77-80
Electric resistances between Ti and n(+)-Si(100) wafers which were ground and lapped have been examined. The grinding and lapping of the wafers leads to an increase in the ohmic resistance, but not st deviation from ohmic characteristics. The increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25385bde3d2e1545b4fd464dabaa6adb
https://doi.org/10.1002/1521-396x(199703)160:1<77::aid-pssa77>3.0.co
https://doi.org/10.1002/1521-396x(199703)160:1<77::aid-pssa77>3.0.co