Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Zhang Zhuding"'
Autor:
Sun, Jie, Sun, Huiqing, Yi, Xinyan, Yang, Xian, Liu, Tianyi, Wang, Xin, Zhang, Xiu, Fan, Xuancong, Zhang, Zhuding, Guo, Zhiyou
Publikováno v:
In Superlattices and Microstructures July 2017 107:49-55
Publikováno v:
In Superlattices and Microstructures April 2017 104:19-23
Publikováno v:
In Superlattices and Microstructures January 2017 101:293-298
Autor:
Sun, Jie, Sun, Huiqing, Yi, Xinyan, Yang, Xian, Fan, Xuancong, Zhang, Cheng, Zhang, Zhuding, Guo, Zhiyou
Publikováno v:
In Superlattices and Microstructures September 2016 97:371-377
Publikováno v:
In Superlattices and Microstructures December 2015 88:467-473
Publikováno v:
Superlattices and Microstructures. 104:19-23
Al x Ga 1-x N/Al 0.6 Ga 0.4 N graded superlattice hole blocking layers (GSL-HBLs) and Al x Ga 1-x N/Al 0.6 Ga 0.4 N graded superlattice electron blocking layers (GSL-EBLs) are applied to the traditional AlGaN-based ultraviolet light-emitting diodes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615ee38e79cb2b398c46d7e38864e601
https://doi.org/10.1016/j.spmi.2017.01.042
https://doi.org/10.1016/j.spmi.2017.01.042
Autor:
Yang Xian, Zhiyou Guo, Zhang Zhuding, Cheng Zhang, Yi Xinyan, Huiqing Sun, Sun Jie, Xuancong Fan
Publikováno v:
Superlattices and Microstructures. 97:371-377
Ultra violet light-emitting diodes (UVLEDs) with different types of Mg-doped barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c3677047793051b543f4601d309dcfb
https://doi.org/10.1016/j.spmi.2016.06.030
https://doi.org/10.1016/j.spmi.2016.06.030
Publikováno v:
Journal of Display Technology. 12:573-576
Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are investigated numerically. As a benefit of this special structural design, the electrons woul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061a405757107fd48e8ff58ec16b0b3a
https://doi.org/10.1109/jdt.2015.2509001
https://doi.org/10.1109/jdt.2015.2509001
Publikováno v:
Superlattices and Microstructures. 88:467-473
This paper principally presents the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs). Compared to conventional EBL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c74e13add791eee3683252dc9884a2e2
https://doi.org/10.1016/j.spmi.2015.10.003
https://doi.org/10.1016/j.spmi.2015.10.003
Autor:
Xuna Li, Zhang Zhuding, Min Yang, Hao Sun, Huiqing Sun, Zhiyou Guo, Huan Zheng, Cai Jinxin, Xuancong Fan, Cheng Zhang
Publikováno v:
Journal of Display Technology. 11:776-782
InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with the step stage MQW structure have been investigated numerically. LEDs exhibit enhanced light output power and reduced turn-on voltage with the step stage MQW. Simulated results s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d8b4623ffdec0c9eb7d82c380a7446
https://doi.org/10.1109/jdt.2015.2445974
https://doi.org/10.1109/jdt.2015.2445974