Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Suppress Dark‐Current for High‐Photoresponse MoS2 Transistor.

Autor: Zhang, Chunchi¹ (AUTHOR), Liu, Jinxiu¹ (AUTHOR), Wu, Haijuan¹ (AUTHOR), Tan, Chao¹ (AUTHOR), Hao, Xin² (AUTHOR), Wang, Zegao¹ (AUTHOR) zegao@scu.edu.cn

Publikováno v: Advanced Optical Materials. Nov2024, p1. 8p. 5 Illustrations.

Highly Tunable, Broadband, and Negative Photoresponse MoS2 Photodetector Driven by Ion-Gel Gate Dielectrics.

Autor: Shen, Zhenzhen, Zhang, Chunchi, Meng, Yajing, Wang, Zegao

Publikováno v: ACS Applied Materials & Interfaces; 7/20/2022, Vol. 14 Issue 28, p32412-32419, 8p

Promotion of a Mo-based ionic crystal precursor for MoS 2 wafer growth.

Autor: Liu J; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China. zegao@scu.edu.cn., Zhang C; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China. zegao@scu.edu.cn., Huang Y; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China. zegao@scu.edu.cn., Wu H; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China. zegao@scu.edu.cn., Tan C; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China. zegao@scu.edu.cn., Wang Z; College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China. zegao@scu.edu.cn.

Publikováno v: Nanoscale [Nanoscale] 2024 Dec 12; Vol. 16 (48), pp. 22403-22410. Date of Electronic Publication: 2024 Dec 12.