Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zhanfei Han"'
Autor:
Tong Liu, Xiangdong Li, Zhanfei Han, Lili Zhai, Junbo Wang, Shuzhen You, Jincheng Zhang, Jie Zhang, Zhibo Cheng, Yuanhang Zhang, Qiushuang Li, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 170-175 (2024)
Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production. The instability of this contact has been puzzling the industry and academia
Externí odkaz:
https://doaj.org/article/62e7c743fb5144c68531d776fa36d21f
Autor:
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao
Publikováno v:
Micromachines, Vol 15, Iss 1, p 156 (2024)
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN hetero
Externí odkaz:
https://doaj.org/article/7b55b01bc6b44340a22ab07378203714
Autor:
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao
Publikováno v:
Micromachines, Vol 14, Iss 5, p 940 (2023)
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transp
Externí odkaz:
https://doaj.org/article/35499b902c024fa1b9190b675ff74ecd