Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zhan-Gao Wu"'
Publikováno v:
Crystals, Vol 11, Iss 2, p 136 (2021)
Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor high-electron mobility transistors (MOS-HEMTs) and, thus, their reliability. In this paper, we demonstrate the
Externí odkaz:
https://doaj.org/article/dad08e609d5b44eb837230916cbd8772
Publikováno v:
Materials
Volume 14
Issue 6
Materials, Vol 14, Iss 1534, p 1534 (2021)
Volume 14
Issue 6
Materials, Vol 14, Iss 1534, p 1534 (2021)
In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO2 and compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a28ffe4fa26d555c8a58074f6dba3f6e
Publikováno v:
Materials
In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO2 and compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1e50ff69428ab41add0fce204ee66925
https://pubmed.ncbi.nlm.nih.gov/33801062
https://pubmed.ncbi.nlm.nih.gov/33801062
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:065002
The surface condition under the gate is critically important to improve the device characteristics and thus reliability of the AlGaN/GaN high electron mobility transistor (HEMT). In this report, we demonstrated the reduction of leakage current (IG) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d1380bff8a040bf7859d52e90aabfb3
https://doi.org/10.1149/2162-8777/ac72c0
https://doi.org/10.1149/2162-8777/ac72c0
Publikováno v:
ECS Journal of Solid State Science & Technology; Jun2022, Vol. 11 Issue 6, p299-305, 7p
Publikováno v:
Semiconductor Science and Technology. 36:095003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::842eb42d1dab60a912ffc55a726893c5
https://doi.org/10.1088/1361-6641/ac05df
https://doi.org/10.1088/1361-6641/ac05df