Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Zh. Zhanabergenov"'
Publikováno v:
Applied Clay Science. :8-11
We present first principles calculations of structural properties, electronic structure, and optical properties of hexagonal Mg 3 Si 2 O 5 (OH) 4 by using the Vienna ab initio simulation package (VASP) within the generalized-gradient approximation (G
Publikováno v:
Semiconductors. 42:1377-1382
The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient la
Publikováno v:
Semiconductors. 40:180-182
The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide inter
Publikováno v:
Technical Physics Letters. 29:1052-1054
The parameters of polycrystalline cadmium telluride (CdTe) solar cells exhibit nonmonotonic variation with increasing dose of γ radiation. It is established that this behavior is related to a nonmonotonic dose dependence of the minority carrier life
Publikováno v:
Technical Physics Letters. 29:917-919
The parameters of p-n-p structures based on polycrystalline cadmium telluride films exhibit non-monotonic variation with increasing doses of γ radiation. It is established that this behavior is related to an increase in the base thickness and to a n
Autor:
K. Zh. Zhanabergenov, E. P. Sytaya
Publikováno v:
Soviet Physics Journal. 13:697-700
The emission properties of the close-packed (110) and porous (111) faces of a tungsten crystal were studied with band-shaped samples in planar devices at a residual gas pressure of 10−9 torr. The experimental apparatus has a provision for simultane
Autor:
K. Zh. Zhanabergenov
Publikováno v:
Soviet Physics Journal. 14:1734-1736
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