Zobrazeno 1 - 10
of 299
pro vyhledávání: '"Zeynep Celik-Butler"'
Publikováno v:
IEEE Sensors Journal. 21:12606-12617
Desire to integrate electronic devices more closely into the everyday life of the consumer led to the emergence of flexible devices, which can conform to any shape surface. These flexible devices are lighter, thinner, and more resilient than their ri
Publikováno v:
IEEE Transactions on Electron Devices. 68:713-719
We investigated the effect of channel hot carrier (CHC) stressing on the creation of gate oxide defect centers causing random telegraph signals (RTSs) in pMOSFETs. To identify these stress-induced hole traps in the oxide and fully characterize their
Autor:
Tanvir Ahmed, Zeynep Celik-Butler
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:678-685
Although it is the worst degradation mechanism, the effect of channel hot carrier (CHC) stressing on random telegraph signals (RTS) has not been given enough attention in pMOSFETs. We report on the effect of CHC stressing on different RTS trap parame
In recent years, material printing on flexible and disposable substrates has received substantial interest for realizing low cost electronic and sensing systems on large-areas. As a result, new methods such as printing and additive manufacturing, etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::008ae1110dcee7090140fceda062d728
Publikováno v:
Noise in Nanoscale Semiconductor Devices ISBN: 9783030374990
Random telegraph signals (RTS) have been used as a technique for gate oxide defect analyses for the last few decades. The time required by a gate oxide defect to capture and emit an inversion layer carrier can be used to extract the defect energy par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1e682d876e52de04e0cea3772fc4c7
https://doi.org/10.1007/978-3-030-37500-3_17
https://doi.org/10.1007/978-3-030-37500-3_17
Autor:
Zeynep Celik-Butler
Publikováno v:
Women in Microelectronics ISBN: 9783030468934
This chapter provides a brief background to the development of multifunctional sensors that can conform to any surface. The objective is to achieve what is now referred to, as “Smart Skin” (sensitive skin as defined by Vladimir Lumelsky, one of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f86e258f8105c8bb9e32fbd748d91312
https://doi.org/10.1007/978-3-030-46377-9_5
https://doi.org/10.1007/978-3-030-46377-9_5
Publikováno v:
IEEE Transactions on Electron Devices. 65:4527-4534
We report on the investigation of random telegraph signals (RTSs) in pMOSFETs at variable temperatures to identify and characterize the hole traps residing at the oxide–semiconductor interface. Attractive center defects as well as a repulsive cente
Publikováno v:
Nano Energy. 50:159-168
A complete investigation of the effect of Li doping on the physical, material, electromechanical and piezoelectric properties of ZnO nanowires (NWs) is presented. Low temperature hydrothermal growth technique is used to grow vertically aligned crysta
Autor:
Md. Sohel Mahmood, Zeynep Celik-Butler
Publikováno v:
IEEE Sensors Journal. 18:4089-4096
This paper presents a wafer-level vacuum-packaged z-axis capacitive micro accelerometer fabricated on a flexible polyimide substrate and encapsulated by another polyimide superstrate enabling the flexibility, bendability, and portability of both the
Publikováno v:
Sensors and Actuators A: Physical. 263:530-541
Surface micro-machined z-axis capacitive accelerometers were designed and fabricated on a flexible polyimide substrate, conformal down to 2 cm radius of curvature with the stresses sustained by all layers well below the yield strength for each materi