Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Zesheng Lv"'
Autor:
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao
Publikováno v:
Micromachines, Vol 15, Iss 1, p 156 (2024)
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN hetero
Externí odkaz:
https://doaj.org/article/7b55b01bc6b44340a22ab07378203714
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3381 (2022)
Reported herein is the atomic layer deposition (ALD) of novel ternary ZnCoxOy films possessing p-type semiconducting behavior. The preparation comprises of optimized ZnO and Co3O4 deposition in sub-cycles using the commercially available precursors c
Externí odkaz:
https://doaj.org/article/b65d5806414e4f0f8f89829bb3477051
Publikováno v:
Nanomaterials, Vol 12, Iss 3, p 327 (2022)
Superfluorescence is a collective emission from quantum coherent emitters due to quantum fluctuations. This is characterized by the existence of the delay time (τD) for the emitters coupling and phase-synchronizing to each other spontaneously. Here
Externí odkaz:
https://doaj.org/article/8678acd3bbfb476687fab5a99b1deb80
Publikováno v:
Journal of Materials Chemistry C. 11:5281-5289
Polarization induced negative charges at pseudo-crystalline InGaN/GaN heterointerfaces were utilized to increase the interface potential and to form a bidirectional potential barrier, leading to an ultrasensitive photoresponse.
Publikováno v:
Photonics Research.
Publikováno v:
ACS Applied Nano Materials. 5:351-360
Publikováno v:
2022 Asia Communications and Photonics Conference (ACP).
Publikováno v:
IEEE Electron Device Letters. 42:1362-1365
Visible-light heterojunction phototransistors (HPTs) featuring high responsivity, high speed, and bias-controlled spectral response were fabricated using dopant-free polarization induced p-type base and InGaN(4 nm)/GaN(1.8 nm) superlattice (SL) absor
Publikováno v:
The Journal of Physical Chemistry C. 125:16643-16651
Publikováno v:
Journal of Alloys and Compounds. 937:168433