Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zepeng Qiao"'
Autor:
Jiaqi He, Qing Wang, Guangnan Zhou, Wenmao Li, Yang Jiang, Zepeng Qiao, Chuying Tang, Gang Li, Hongyu Yu
Publikováno v:
IEEE Electron Device Letters. 43:529-532
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589ca55dd152c308f76b9fe0a62acf73
https://doi.org/10.1109/led.2022.3149943
https://doi.org/10.1109/led.2022.3149943
Autor:
Lingli Jiang, Hongyu Yu, Minghao He, Kah-Wee Ang, Fanming Zeng, Wei-Chih Cheng, Qing Wang, Yang Jiang, Wenmao Li, Zepeng Qiao, Yu-Chieh Chien
Publikováno v:
IEEE Transactions on Electron Devices. 68:3314-3319
In this article, a $\beta $ -Ga2O3 metal-interlayer-semiconductor Schottky barrier diode (MIS-SBD) using Al-reacted aluminum oxide as the interlayer is demonstrated for the first time and compared with conventional metal-semiconductor (MS) Schottky b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe636b15eea0bad9098ede6795b6a133
https://doi.org/10.1109/ted.2021.3081075
https://doi.org/10.1109/ted.2021.3081075
Autor:
Yang Jiang, Fangzhou Du, Zepeng Qiao, Wei-Chih Cheng, Jiaqi He, Xinyi Tang, Feifei Liu, Lei Wen, Qing Wang, Hongyu Yu
Publikováno v:
2021 IEEE 14th International Conference on ASIC (ASICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfdb452fbd1f4483dea08fc810f0834c
https://doi.org/10.1109/asicon52560.2021.9620249
https://doi.org/10.1109/asicon52560.2021.9620249
Autor:
Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang, HongYu Yu
Publikováno v:
Applied Physics Letters. 121:212105
In this work, we use Si/Tl5Al1/TiN for a source/drain ohmic contact to demonstrate an ultra-low contact resistance of 0.11 Ω mm (ρc = 2.62 × 10−7 Ω cm2) on non-recessed i-InAlN/GaN heterostructures. The Ti5Al1 alloy was used to suppress the out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7157984d297ae6d3caeac016d344e91d
https://doi.org/10.1063/5.0117205
https://doi.org/10.1063/5.0117205
Autor:
Zepeng Qiao, Mengya Fan, Yang Jiang, Xinyi Tang, Hongyu Yu, Fangzhou Du, Gaiying Yang, Qing Wang
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this paper, we demonstrated a gold-free Ti 5 Al 1 /TiN source and drain (S/D) contact on non-recessed AlGaN/AlN/GaN structure. Compared to the conventional gold-based (Ti/Al/Ti/ Au and Ta/ Al/Au) or multilayer gold-free (Ti/Al/TiN and Ta/Al/Ta) S/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01a51a7706bd1fb837596ad2eff8254
https://doi.org/10.1109/edtm50988.2021.9421018
https://doi.org/10.1109/edtm50988.2021.9421018
Autor:
Wei-Chih Cheng, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang, Hongyu Yu
Publikováno v:
Journal of Vacuum Science & Technology B. 40:022212
The high- k nature of HfO2 makes it a competitive gate oxide for various GaN-based power devices, but the high trap densities at the HfO2/GaN interface have hindered the application. This work was specifically carried out to explore the interface bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22aabf91e4b570a9817f46896f95b898
https://doi.org/10.1116/6.0001654
https://doi.org/10.1116/6.0001654