Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zengliang Ye"'
Autor:
Mehzabeen Mehedi, Kean Hong Tok, Zengliang Ye, Jian Fu Zhang, Zhigang Ji, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Access, Vol 9, Pp 43551-43561 (2021)
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes circuits vulnerable to nois
Externí odkaz:
https://doaj.org/article/75d8976cbe2746f5ad572d4df86ade03
Autor:
Mehzabeen Mehedi, Kean Hong Tok, Jian Fu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Access, Vol 8, Pp 182273-182282 (2020)
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important. To optimize circuit design, one needs assessing the impact of RTN on the circuit a
Externí odkaz:
https://doaj.org/article/df7db409461345a9bd6c47ddf91a368f
Autor:
Kean H. Tok, Jian F. Zhang, James Brown, Zengliang Ye, Zhigang Ji, Weidong Zhang, John S. Marsland
Publikováno v:
IEEE Transactions on Electron Devices. 69:5780-5786
Random telegraph noise (RTN) adversely induces time dependent device-to-device variations and requires modeling to optimize circuit design. Many early works were focused under dc test conditions, although digital circuits typically operate under ac c
Autor:
Kean H. Tok, Mehzabeen Mehedi, Jian F. Zhang, James Brown, Zengliang Ye, Zhigang Ji, Weidong Zhang, John S. Marsland, Asen Asenov, Vihar Georgiev
Publikováno v:
IEEE Transactions on Electron Devices. 69:3869-3875
Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for smaller devices and lower operation voltage. To optimize the circuit design, many efforts have been made to model RTN. RTN is highly stochastic, with sig
Autor:
Kean Hong Tok, Mehzabeen Mehedi, Jian Fu Zhang, Zengliang Ye, Zhigang Ji, Weidong Zhang, John Marsland
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Autor:
John Marsland, Zhigang Ji, Kean Hong Tok, Jian Fu Zhang, Weidong Zhang, Zengliang Ye, Mehzabeen Mehedi
Publikováno v:
IEEE Access, Vol 9, Pp 43551-43561 (2021)
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes circuits vulnerable to nois
Autor:
Mehzabeen Mehedi, Kean H. Tok, Jian F. Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
Publikováno v:
2021 IEEE 14th International Conference on ASIC (ASICON)
Modelling Random Telegraph Noise (RTN) is a challenging task and its accuracy is generally unknown. The Monte Carlo modelling in the time domain requires the statistical distribution of the capture and emission time (CET) constant of traps. Although
Autor:
Kean Hong Tok, Weidong Zhang, Mehzabeen Mehedi, Zhigang Ji, Zengliang Ye, John Marsland, Jian Fu Zhang
Publikováno v:
IEEE Access, Vol 8, Pp 182273-182282 (2020)
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important. To optimize circuit design, one needs assessing the impact of RTN on the circuit a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2a898487a95c26b4ee24707d31b6637
https://researchonline.ljmu.ac.uk/id/eprint/13797/1/An_Assessment_of_the_Statistical_Distribution_of_Random_Telegraph_Noise_Time_Constants.pdf
https://researchonline.ljmu.ac.uk/id/eprint/13797/1/An_Assessment_of_the_Statistical_Distribution_of_Random_Telegraph_Noise_Time_Constants.pdf