Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Zengjun Chen"'
Autor:
Zengjun Chen, Tatjana Dedova, Nicolae Spalatu, Natalia Maticiuc, Marin Rusu, Atanas Katerski, Ilona Oja Acik, Thomas Unold, Malle Krunks
Degradation of organic pollutants such as methylene blue MB from water resources is currently of particular interest. Employment of a heterojunction device with optimized layer properties and proper interface engineering can enhance the photocatalyti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43187847f1c8462f9c2072c1c4e8c625
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108909
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108909
Publikováno v:
Applied Surface Science. 548:149118
Nickel(II) oxide (NiO) films were grown via spray pyrolysis method. The effects of deposition temperature (Ts) and solvent type (aqueous, alcoholic) on the properties of the NiO films were studied. It was found that Ts significantly influenced the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96950c7cd2d7b9a61c9dd8150bb87741
https://doi.org/10.1016/j.apsusc.2021.149118
https://doi.org/10.1016/j.apsusc.2021.149118
Autor:
John R. Williams, Leonard C. Feldman, Zengjun Chen, Mingyu Li, John Rozen, Ayayi C. Ahyi, Xingguang Zhu
Publikováno v:
Solid-State Electronics. 57:76-79
We report results on the introduction of nitrogen at the SiC/SiO2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3309f171f627beab5680db2b944923d2
https://doi.org/10.1016/j.sse.2010.12.002
https://doi.org/10.1016/j.sse.2010.12.002
Autor:
John R. Williams, Tamara Isaacs-Smith, Mingyu Li, Xingguang Zhu, J. Crofton, Ayayi C. Ahyi, Zengjun Chen
Publikováno v:
Journal of Electronic Materials. 39:540-544
Samples for transmission line model (TLM) and Hall measurements were fabricated on (0001) 4H-SiC implanted with nitrogen at 1 × 1018 cm−3, 4 × 1018 cm−3, 1 × 1019 cm−3, 4 × 1019 cm−3, and 1 × 1020 cm−3. Following high-temperature activ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::519922fb0286be1d10862322de335283
https://doi.org/10.1007/s11664-010-1128-1
https://doi.org/10.1007/s11664-010-1128-1
Autor:
John R. Williams, Ayayi C. Ahyi, Tamara Isaacs-Smith, Zengjun Chen, Mingyu Li, Xingguang Zhu, Leonard C. Feldman
Publikováno v:
Journal of Electronic Materials. 39:526-529
Metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide–semiconductor (O–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99a1849bb7a54a7f335e5673e95aea2
https://doi.org/10.1007/s11664-010-1096-5
https://doi.org/10.1007/s11664-010-1096-5
Autor:
Laszlo Ujj, Ferenc Bartha, Zengjun Chen, Chandra Prayaga, Timothy Royappa, Charles Amos, Mauricio Tsukuda, P. M. Champion, L. D. Ziegler
Publikováno v:
AIP Conference Proceedings.
The emerging field of nanotechnology requires new methodologies to be developed in order to address the needs of fabrication, manipulation, control, and measurement of motions of molecules and devices on the nanoscale. Optical excitation and control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711b984e9daf31d3b6fc3aa498bc0248
https://doi.org/10.1063/1.3482637
https://doi.org/10.1063/1.3482637
Autor:
Minyu Li, Hang Dong Lee, Torgny Gustafsson, Zengjun Chen, Xingguang Zhu, John Rozen, Ayayi C. Ahyi, Leonard C. Feldman, John R. Williams, Tian Feng, Tamara Issac-Smith
Publikováno v:
2009 International Semiconductor Device Research Symposium.
Silicon Carbide (4-H SiC) is a promising candidate for high power and high temperature MOS devices. However, the performance and wide-scale application of such devices is hindered by the poor quality of SiO 2 /SiC interface. Much work has been done i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92342bc47fae3b94f10ce89d24e037fc
https://doi.org/10.1109/isdrs.2009.5378186
https://doi.org/10.1109/isdrs.2009.5378186
Autor:
Xingguang Zhu, Hang Dong Lee, Tian Feng, Rozen, J., Ahyi, A.C., Zengjun Chen, Minyu Li, Issac-Smith, T., Williams, J.R., Gustafsson, T., Feldman, L.C.
Publikováno v:
2009 International Semiconductor Device Research Symposium; 2009, p1-2, 2p