Zobrazeno 1 - 10
of 685
pro vyhledávání: '"Zeng, Yuping"'
Autor:
Liu, Shang, Liang, Yunfan, Zhao, Haochen, Eldose, Nirosh M., Bae, Jin-Hee, Concepcion, Omar, Jin, Xiaochen, Chen, Shunda, Bikmukhametov, Ilias, Akey, Austin, Cline, Cory T., Covian, Alejandra Cuervo, Wang, Xiaoxin, Li, Tianshu, Zeng, Yuping, Buca, Dan, Yu, Shui-Qing, Salamo, Gregory J., Zhang, Shengbai, Liu, Jifeng
Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This
Externí odkaz:
http://arxiv.org/abs/2407.02767
Publikováno v:
In Journal of Computational and Applied Mathematics 1 August 2024 445
Autor:
Zeng, Yuping, Gan, Xiangyu, Xu, Zhourui, Hu, Xiaoxiang, Hu, Chenxuan, Ma, Hanbin, Tu, Hangjia, Chai, Bao, Yang, Chengbin, Hu, Siyi, Chai, Yujuan
Publikováno v:
In Analytica Chimica Acta 15 April 2024 1298
Publikováno v:
In Journal of Business Research April 2024 177
Publikováno v:
In Journal of Clinical Neuroscience March 2024 121:53-60
Autor:
Zhao, Haochen, Lin, Guangyang, Zhang, Yuying, Park, Suho, Hickey, Ryan, Zhama, Tuofu, Cui, Peng, Sourav, Sagar, Kolodzey, James, Zeng, Yuping
Publikováno v:
In Optical Materials March 2024 149
Publikováno v:
In Chemosphere February 2024 349
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented by insertin
Externí odkaz:
http://arxiv.org/abs/2101.09760
Autor:
Yang, Chengbin, Gan, Xiangyu, Zeng, Yuping, Xu, Zhourui, Xu, Longqian, Hu, Chenxuan, Ma, Hanbin, Chai, Bao, Hu, Siyi, Chai, Yujuan
Publikováno v:
In Biosensors and Bioelectronics 15 December 2023 242