Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Zeng, Yi-Fan"'
Publikováno v:
In Heliyon July 2023 9(7)
Autor:
Wei, Xin-Yu1,2 (AUTHOR), Zeng, Yi-Fan3 (AUTHOR), Guo, Qi-Hao1,4 (AUTHOR), Liu, Ji-Jia3 (AUTHOR), Yin, Ni3 (AUTHOR), Liu, Yan5 (AUTHOR), Zeng, Wen-Jing1,2 (AUTHOR) zengwengjing89@csu.edu.cn
Publikováno v:
Scientific Reports. 8/28/2023, Vol. 13 Issue 1, p1-16. 16p.
Autor:
Zeng, Yi-Fan, Yang, Ke-Xin, Cui, Yilong, Zhu, Xiao-Na, Li, Rui, Zhang, Hanqing, Wu, Dong Chuan, Stevens, Raymond C., Hu, Ji, Zhou, Ning
Publikováno v:
Nature Communications; 4/15/2024, Vol. 15 Issue 1, p1-16, 16p
Autor:
Zeng, Yi-Fan1,2,3,4 (AUTHOR), Chen, Chu-Mao1,2 (AUTHOR), Li, Xiao-Yan5 (AUTHOR), Chen, Jun-Jiang1,2,3 (AUTHOR), Wang, Yan-Ge1,2,3 (AUTHOR), Ouyang, Shi6 (AUTHOR), Ji, Tian-Xing7 (AUTHOR), Xia, Yong1,2,3 (AUTHOR), Guo, Xu-Guang1,2,3,8,9,10 (AUTHOR) gysygxg@gmail.com
Publikováno v:
BMC Microbiology. 6/23/2020, Vol. 20 Issue 1, p1-6. 6p.
Autor:
Chang, Cheng, Wang, Shu-Hui, Xu, Li-Na, Su, Xue-Ling, Zeng, Yi-Fan, Wang, Peng, Zhang, Li-Rong, Han, Sheng-Na
Publikováno v:
Journal of Interventional Cardiac Electrophysiology; Mar2022, Vol. 63 Issue 2, p239-248, 10p
Autor:
Yang, Yan, He, Xin, Tang, Qian-Qian, Shao, You-Cheng, Song, Wen-Jing, Gong, Peng-Ju, Zeng, Yi-Fan, Huang, Si-Rui, Zhou, Jiang-Yao, Wan, Hui-Fang, Wei, Lei, Zhang, Jing-Wei
Publikováno v:
Frontiers in Oncology; 7/23/2021, Vol. 11, p1-16, 16p
Publikováno v:
Environmental Earth Sciences. 77
The risk analysis on karst groundwater pollution is a research hotspot in current international hydrogeological field as well as the premise of preventing and controlling groundwater pollution. According to the characteristics of groundwater pollutio
Autor:
Gong, Peng-Ju, Shao, You-Cheng, Yang, Yan, Song, Wen-Jing, He, Xin, Zeng, Yi-Fan, Huang, Si-Rui, Wei, Lei, Zhang, Jing-Wei
Publikováno v:
Frontiers in Oncology; 12/9/2020, Vol. 10, pN.PAG-N.PAG, 18p
Autor:
Gong, Peng-Ju, Shao, You-Cheng, Huang, Si-Rui, Zeng, Yi-Fan, Yuan, Xiao-Ning, Xu, Jing-Jing, Yin, Wei-Nan, Wei, Lei, Zhang, Jing-Wei
Publikováno v:
Frontiers in Oncology; 12/2/2020, Vol. 11, pN.PAG-N.PAG, 18p
Publikováno v:
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
Comparing with CoolMOSTM, a new deep trench structure of superjunction power VDMOS has been developed in HHNEC. In this paper, we have studied main reliability failure mechanisms subjected to HTRB (High Temperature Reverse Bias). Positive improvement