Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Zena Yohannes"'
Publikováno v:
Ethiopian Journal of Science and Technology; Vol 9, No 2 (2016); 113-122
This study investigated the effect of phosphorus dopant concentration on mobility of crystalline silicon (c-Si). It considers different temperature ranges, from 100 K to 500 K, and dopant concentration from 10 12 cm -3 to 10 20 cm -3 in relation to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c040c22116c6c7e2592bbc31606086f
https://www.ajol.info/index.php/ejst/article/view/144305
https://www.ajol.info/index.php/ejst/article/view/144305
