Evaluating the Switching Efficiency of Avalanche S-Diodes in a High-Current Mode

Autor: Prudaev, Ilya A., Kopyev, Viktor V., Oleinik, Vladimir L., Zemlyakov, Valery E.

Publikováno v: IEEE Transactions on Electron Devices; October 2024, Vol. 71 Issue: 10 p5831-5837, 7p

GaN IC E-mode p-channel and n-channel transistors simulation

Autor: Egorkin, Vladimir, Zemlyakov, Valery, Zaitsev, Aleksei, Chukanova, Olga

This article demonstrates TCAD simulation of normally-off p-channel and nchannel transistors based on a p-GaN gate power platform and estimates interconnections between the key parameters of the heterostructure and device behavior, in other words the

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Low-pass filter based on a high-temperature superconducting film

Autor: Balyko, A. K., Gusel Nikov, N. A., Zemlyakov valery, Samokhin, G. S., Yusupova, N. I.

Publikováno v: Scopus-Elsevier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::271b0c6456e6647f6cafca67c396502b
http://www.scopus.com/inward/record.url?eid=2-s2.0-33747679394&partnerID=MN8TOARS

Effect of nonuniform current injection on electroluminescence spectra of InGaN-GaN blue-green light-emitting diode.

Autor: Khmyrova, Irina, Kholopova, Yulia, Larkin, Sergey, Zemlyakov, Valery, Shevchenko, Bogdan, Tsatsul'nikov, Andrei, Shapoval, Sergei

Publikováno v: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS); 2016, p1-1, 1p