Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Zema Z"'
Autor:
Obsa MS, Takiso KT, Ayele TT, Chare Koyra H, Tafesse Hidoto K, Getahun Molla Shanka G, Kelbiso Hanfore L, Arba MA, Anjulo AA, Worku Kercho M, Zema Z
Publikováno v:
International Journal of Women's Health, Vol Volume 13, Pp 645-652 (2021)
Mohammed Suleiman Obsa,1 Kassahun Tekle Takiso,2 Tamiru Tilahun Ayele,1 Hailu Chare Koyra,3 Kassahun Tafesse Hidoto,4 Getahun Getahun Molla Shanka,2 Lolemo Kelbiso Hanfore,5 Mihiretu Alemayehu Arba,4 Antehun Alemayehu Anjulo,6 Melkamu Worku Kercho,7
Externí odkaz:
https://doaj.org/article/e6da2ad3447d4225a1c06fc303293caa
Publikováno v:
Risk Management and Healthcare Policy, Vol Volume 13, Pp 2301-2308 (2020)
Eskinder Wolka, 1 Zewde Zema, 2 Melkamu Worku, 3 Kassahun Tafesse, 1 Antehun Alemayehu, 4 Kassahun Tekle Takiso, 5 Hailu Chare, 2 Lolemo Kelbiso 6 1Wolaita Sodo University College of Health Sciences and Medicine, School of Public Health, Sodo, Ethiop
Externí odkaz:
https://doaj.org/article/4528ff40d903487f9e4d52e98709f3a9
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Chu Z; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., You J; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Oct 14, pp. e2409867. Date of Electronic Publication: 2024 Oct 14.
Autor:
Zhou H; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Cai K; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Yu S; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Wang Z; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Xiong Z; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Chu Z; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Chu X; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., Jiang Q; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China., You J; Laboratory of Semiconductor Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China. jyou@semi.ac.cn.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P. R. China. jyou@semi.ac.cn.
Publikováno v:
Nature communications [Nat Commun] 2024 Aug 06; Vol. 15 (1), pp. 6679. Date of Electronic Publication: 2024 Aug 06.
Autor:
Jiang J; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Shi M; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Xia Z; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Cheng Y; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Chu Z; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Zhang W; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China., Li J; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Yin Z; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., You J; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China., Zhang X; Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
Publikováno v:
Science advances [Sci Adv] 2024 May 03; Vol. 10 (18), pp. eadn5683. Date of Electronic Publication: 2024 May 03.
Autor:
Mamo M; School of Anesthesia., Zema Z; Department of Pharmacy, Wolaita Soddo University, Wolaita Soddo., Abera W; School of Anesthesia., Tila M; School of Anesthesia., Darma B; School of Anesthesia., Suileman M; Department of Anesthesia, Arsi University, Asella., Gurmu M; Department of Anesthesia, Dilla University, Dilla, Ethiopia., Ayele M; School of Anesthesia., Demeke T; School of Anesthesia., Sintayhu A; School of Anesthesia., Dendir G; School of Anesthesia.
Publikováno v:
Annals of medicine and surgery (2012) [Ann Med Surg (Lond)] 2023 Apr 17; Vol. 85 (6), pp. 2324-2329. Date of Electronic Publication: 2023 Apr 17 (Print Publication: 2023).
Autor:
Xie M; Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China., Guo J; Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China., Zhang X; Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China., Bi C; Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China., Zhang L; Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China., Chu Z; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, P. R. China., Zheng W; Key Laboratory of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun130012, China., You J; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, P. R. China., Tian J; Institute for Advanced Materials and Technology, University of Science and TechnologyBeijing100083, China.
Publikováno v:
Nano letters [Nano Lett] 2022 Oct 26; Vol. 22 (20), pp. 8266-8273. Date of Electronic Publication: 2022 Oct 17.