Radiative and nonradiative recombination processes in GaNP(As) alloys

Autor: Wełna, M., Żelazna, K., Létoublon, A., Cornet, C., Janicki, Ł., Zieliński, M.S., Kudrawiec, R.

Publikováno v: In Materials Science & Engineering B February 2022 276

Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Autor: Zelazna, K., Kudrawiec, R., Luce, A., Yu, K.-M., Kuang (邝彦瑾), Y.J., Tu, C.W., Walukiewicz, W.

Publikováno v: In Solar Energy Materials and Solar Cells 15 December 2018 188:99-104

Nitrogen-related intermediate band in P-rich GaNxPyAs1-x-yalloys

Autor: Zelazna, K, Gladysiewicz, M, Polak, MP, Almosni, S, Létoublon, A, Cornet, C, Durand, O, Walukiewicz, W, Kudrawiec, R

Publikováno v: Zelazna, K; Gladysiewicz, M; Polak, MP; Almosni, S; Létoublon, A; Cornet, C; et al.(2017). Nitrogen-related intermediate band in P-rich GaNxPyAs1-x-yalloys. Scientific Reports, 7(1). doi: 10.1038/s41598-017-15933-1. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/2879t5kf

© 2017 The Author(s). The electronic band structure of phosphorus-rich GaNxPyAs1-x-yalloys (x ∼ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminesc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::5f29f4f132e8b158b77e571d09078f35
http://www.escholarship.org/uc/item/2879t5kf

GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties

Autor: da Silva, Mickael, Ilahi, Soufiene, Almosni, Samy, Chouchane, Fares, Perrin, Mathieu, Zelazna, K., Yacoubi, N., Kudrawiec, R, Râle, Pierre, Lombez, Laurent, Guillemoles, J.F., Levallois, Christophe, Boyer-Richard, Soline, Durand, Olivier, Cornet, Charles

Publikováno v: 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016)
19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. 2016

International audience; Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP are investigated by optical absorption spectroscopy and photo‐thermal deflection spectroscopy (PDS). First, the strong dependence of optical absorp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::75531651bab8ef30032232003053831c
https://hal.archives-ouvertes.fr/hal-01496917

Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence

Autor: Zelazna, K., Gladysiewicz, M., Kudrawiec, R., Walukiewicz, W., Almosni, Samy, Cornet, Charles, Durand, Olivier

Publikováno v: Compound semiconductor week 2015
Compound semiconductor week 2015, Jun 2015, Santa-Barbara, United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5278bf400fdf7645d8c5bcb65868c7bd
https://hal.science/hal-01147488