Weak Antilocalization and Spin Precession in Quantum Wells

Autor: Knap, W., Skierbiszewski, C., Zduniak, A., Litwin-Staszewska, E., Bertho, D., Kobbi, F., Robert, J. L., Pikus, G. E., Pikus, F. G., Iordanskii, S. V., Mosser, V., Zekentes, K., Lyanda-Geller, Yu. B.

Publikováno v: Phys. Rev. B. 53, 3912 (1996).

The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the wea

Externí odkaz: http://arxiv.org/abs/cond-mat/9602068

Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Autor: Boutopoulos, C., Terzis, P., Zergioti, I., Kontos, A.G., Zekentes, K., Giannakopoulos, K., Raptis, Y.S.

Publikováno v: In Applied Surface Science 2007 253(19):7912-7916

Self-organized SiC nanostructures on silicon

Autor: Cimalla, V., Schmidt, A.A., Foerster, Ch., Zekentes, K., Ambacher, O., Pezoldt, J.

Publikováno v: In Superlattices and Microstructures 2004 36(1):345-351

4H-SIC p-type doping determination from secondary electrons imaging

Autor: Kayambaki, M, Makris, N., Tsagarakis, K., Peyre, Hervé, Stavrinidis, A, Zekentes, K.

Publikováno v: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom

session poster: MO.P.FP14; International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::528a0d5b3e7545608ac7fa10b4899ea8
https://hal.archives-ouvertes.fr/hal-02066375

High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN

Autor: Papanicolaou, N.A, Zekentes, K

Publikováno v: In Solid State Electronics 2002 46(11):1975-1981