Zobrazeno 1 - 10
of 688
pro vyhledávání: '"Zekentes, K"'
Autor:
Knap, W., Skierbiszewski, C., Zduniak, A., Litwin-Staszewska, E., Bertho, D., Kobbi, F., Robert, J. L., Pikus, G. E., Pikus, F. G., Iordanskii, S. V., Mosser, V., Zekentes, K., Lyanda-Geller, Yu. B.
Publikováno v:
Phys. Rev. B. 53, 3912 (1996).
The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the wea
Externí odkaz:
http://arxiv.org/abs/cond-mat/9602068
Autor:
Greenhorn S; The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, Greece.; Laboratoire des Matériaux et de la Génie Physique, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France.; Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France., Bano E; Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France., Stambouli V; Laboratoire des Matériaux et de la Génie Physique, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France., Zekentes K; The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, Greece.; Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, France.
Publikováno v:
Materials (Basel, Switzerland) [Materials (Basel)] 2024 Feb 29; Vol. 17 (5). Date of Electronic Publication: 2024 Feb 29.
Publikováno v:
E3S Web of Conferences, Vol 16, p 12001 (2017)
The process technology for the fabrication of 4H-SiC trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) has been developed. The optimized TIVJFETs have been fabricated with self-aligned nickel silicide source and gate contacts using a
Externí odkaz:
https://doaj.org/article/15e148039cec4187b487bc8f4e7e796c
Publikováno v:
In Optical Materials January 2008 30(5):746-748
Autor:
Dimitrakopulos, G.P., Komninou, Ph., Zekentes, K., Papaioannou, V., Stoemenos, J., Karakostas, Th.
Publikováno v:
Journal of the Mechanical Behavior of Materials, Vol 7, Iss 1, Pp 51-66 (1996)
Externí odkaz:
https://doaj.org/article/2a4af3fc6ffa4fed85ee97d7d69e588c
Autor:
Boutopoulos, C., Terzis, P., Zergioti, I., Kontos, A.G., Zekentes, K., Giannakopoulos, K., Raptis, Y.S.
Publikováno v:
In Applied Surface Science 2007 253(19):7912-7916
Autor:
Zekentes, K., Vasilevskiy, K.
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Dopi
Publikováno v:
In Superlattices and Microstructures 2004 36(1):345-351
Publikováno v:
In Solid State Electronics 2004 48(9):1569-1577
Publikováno v:
12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom
session poster: MO.P.FP14; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::528a0d5b3e7545608ac7fa10b4899ea8
https://hal.archives-ouvertes.fr/hal-02066375
https://hal.archives-ouvertes.fr/hal-02066375