Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Zejie Zheng"'
Publikováno v:
SCIENTIA SINICA Informationis. 50:163-183
The modern integrated circuit is among the worlds mostcomplex systems, but at its heart is a very simple, and we think beautiful,device: the transistor. Right now, 7 nm process technology is the cutting edge in traditional silicon-based integrated-ci
Autor:
Xuedan Lin, Shifan Gao, Zihao Fan, Qinyan Lin, Danhua Wang, Zhenping Liu, Xiaoying Li, Xuchu Wang, Zhihua Tao, Yiyun Wang, Weiwei Liu, Pan Yu, Yibei Dai, Ying Ping, Zejie Zheng
Publikováno v:
Journal of Biomedical Nanotechnology. 15:1792-1800
Since the discovery of exosomes, their potential diagnostic value has been the focus of considerable research. However, the lack of a rapid and simple technique for the quantitative analysis of exosomes greatly limits the application of exosomes in c
Autor:
Bing Chen, Zhuo Chen, Yiming Qu, Ran Cheng, Yi Zhao, Qing-Qing Sun, Wei Liu, David Wei Zhang, Zejie Zheng, Xiao Yu
Publikováno v:
IEEE Electron Device Letters. 39:1469-1472
In this letter, the real-time polarization switching process in HfZrO4 ferroelectric film is investigated at high speed (100 MHz, highest up-to-date) by using the ultrafast measurements system. Based on the measurements over a wide range of speed fro
Publikováno v:
IEEE Transactions on Electron Devices. 65:895-900
In this paper, the back-gate modulation in ultrathin body germanium-on-insulator (UTB GeOI) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) has been investigated. Based on the direct wafer boding and polishing technique, h
Autor:
Xiao Yu, Yi Zhao, Wangran Wu, Zejie Zheng, Heng Wu, Yan-Yan Zhang, Bing Chen, Ran Cheng, Xiaoyan Liu, Longxiang Yin, Peide D. Ye
Publikováno v:
IEEE Electron Device Letters. 38:434-437
We demonstrate an experimental study on the ballistic transport behavior of sub-100 nm GeOI n-MOSFETs, by adopting an ultrafast pulsed I–V system for measurement. High performance GeOI n-MOSFETs suffer severer self-heating effect and traps in the d
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
In this work, novel Ge-on-Insulator (GeOI) MOSFETs with resistive-switchable gate stacks, named RFETs, are proposed and experimentally realized. The junctionless GeOI RFET and typical inversion-mode GeOI RFET are fabricated and both types of RFETs ex
Autor:
Yibei Dai, Shifan Gao, Xiaoying Li, Pan Yu, Xuedan Lin, Qinyan Lin, Zhihua Tao, Yiyun Wang, Zejie Zheng, Ying Ping, Danhua Wang, Weiwei Liu, Zhenping Liu, Zihao Fan, Xuchu Wang
Publikováno v:
SSRN Electronic Journal.
Background: Although exosomes are potential diagnostic and therapeutic biomarkers for diverse diseases, efficient and sensitive technologies for exosomes isolation and detection are still lacking. Methods: In this study, we construct a microfluidic s
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We demonstrate electrical characterizations within sub-1 ns to investigate the self-heating effect (SHE) in 14 nm FinFETs, for the first time. Thanks to the extremely fast I-V measurement speed (∼500 ps), the heat generation and dissipation process
Autor:
Lei Shen, Longxiang Yin, Yi Zhao, Yan-Yan Zhang, Ran Cheng, Xiao Yu, Bing Chen, Xiaoyan Liu, Zejie Zheng
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
In this work, we investigate the effect of hot carrier injection (HCI) on the ballistic transport characteristics of SOI MOSFETs for the first time. Ballistic efficiency is an important indicator of device performance for nanoscale transistors. In th
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
High performance Ge CMOS with quantum well-structured channels has been successfully realized using a single MoS 2 capping layer. Thanks to a large valence band offset (0.43 eV) and conduction band offset (0.5 eV) between the two-layers-thick MoS 2 a