Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zein Baimukhanov"'
Autor:
Gulnara Aralbayeva, Gulnaz Sarsekhan, Aiman Akylbekova, Liudmila A. Vlasukova, Zein Baimukhanov, Vera Yuvchenko, Assyl-Dastan Bazarbek, Alma Dauletbekova, Gaukhar Kabdrakhimova, Abdirash T. Akilbekov
Publikováno v:
Crystals, Vol 14, Iss 8, p 730 (2024)
We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO3) deposited into SiO2/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 108 ions/cm2) fo
Externí odkaz:
https://doaj.org/article/0ef9fe4898ea4eaba01f46254c7122d3
Autor:
Abdirash Akilbekov, Daurzhan Kenbayev, Alma Dauletbekova, Alexey Shalaev, Aiman Akylbekova, Gulnara Aralbayeva, Zein Baimukhanov, Muratbek Baizhumanov, Edgars Elsts, Anatoli I. Popov
Publikováno v:
Crystals, Vol 14, Iss 6, p 480 (2024)
Today, BaFBr crystals activated by europium ions are used as detectors that store absorbed energy in metastable centers. In these materials, the image created by X-ray irradiation remains stable in the dark for long periods at room temperature. As a
Externí odkaz:
https://doaj.org/article/6cc2f79c47a54ee18f9a890d0d7838b8
Autor:
Valeriy Kalytka, Zein Baimukhanov, Yelena Neshina, Ali Mekhtiyev, Pavel Dunayev, Olga Galtseva, Yelena Senina
Publikováno v:
Applied Sciences, Vol 13, Iss 15, p 8755 (2023)
Using the quasi-classical kinetic theory of dielectric relaxation, in addition to existing methods, fundamental mathematical expressions are built, which make it possible to more strictly consider the effects of the main charge carriers’ (protons
Externí odkaz:
https://doaj.org/article/11d404794d3d434681f0d6249ff0a097
Autor:
Alma Dauletbekova, Aiman Akylbekova, Gulnaz Sarsekhan, Abay Usseinov, Zein Baimukhanov, Artem Kozlovskiy, Liudmila A. Vlasukova, Fadey F. Komarov, Anatoli I. Popov, Abdirash T. Akilbekov
Publikováno v:
Crystals, Vol 12, Iss 6, p 817 (2022)
ZnSeO3 nanocrystals with an orthorhombic structure were synthesized by electrochemical and chemical deposition into SiO2/Si ion-track template formed by 200 MeV Xe ion irradiation with the fluence of 107 ions/cm2. The lattice parameters determined by
Externí odkaz:
https://doaj.org/article/d9fddefdcf234f4ea1da679bac445186
Publikováno v:
Proceedings of the Russian higher school Academy of sciences. :18-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4af6fe640001d68f483a0db7674aaeae
https://doi.org/10.17212/1727-2769-2017-2-18-31
https://doi.org/10.17212/1727-2769-2017-2-18-31
Publikováno v:
Proceedings of the Russian higher school Academy of sciences. :7-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e9e4d116604c3f4683ddb93c465ad0
https://doi.org/10.17212/1727-2769-2016-3-7-21
https://doi.org/10.17212/1727-2769-2016-3-7-21