Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Zehor Allam"'
Publikováno v:
Results in Optics, Vol 14, Iss , Pp 100596- (2024)
In this study, the performance of a Cadmium Telluride (CdTe) thin-film solar cell was evaluated with various buffer layers (CdS, ZnSe, ZnO, ZnS) using the Silvaco-Atlas semiconductor device simulator. The impact of these buffer layers on the function
Externí odkaz:
https://doaj.org/article/da7ac8706f2c46b0a7ecadcb3faaa25e
Publikováno v:
Journal of Optics. 52:520-526
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25a606e98092c7395a145bc1eb6e3cb2
https://doi.org/10.1007/s12596-022-01029-1
https://doi.org/10.1007/s12596-022-01029-1
Publikováno v:
Materials Today: Proceedings. 51:2152-2156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b38de9c2ca3ba8f0e1404847b4d47f2e
https://doi.org/10.1016/j.matpr.2021.12.556
https://doi.org/10.1016/j.matpr.2021.12.556
Publikováno v:
Artificial Intelligence and Heuristics for Smart Energy Efficiency in Smart Cities ISBN: 9783030920371
Artificial Intelligence and Heuristics for Smart Energy Efficiency in Smart Cities
Artificial Intelligence and Heuristics for Smart Energy Efficiency in Smart Cities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3554fbe507b652bc766286e6fc74d693
https://doi.org/10.1007/978-3-030-92038-8_78
https://doi.org/10.1007/978-3-030-92038-8_78
Publikováno v:
physica status solidi (a). 220:2200566
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49055e9d849ccf08223a94c076c8ac2
https://doi.org/10.1002/pssa.202200566
https://doi.org/10.1002/pssa.202200566
Publikováno v:
Mathematics and Computers in Simulation. 167:194-201
The present paper indicates a numerical simulation to optimize the photovoltaic characteristics of an InGaN tandem solar cell. The cell is composed of two sub-cells p-In x Ga 1−x N/i-In x Ga 1−x N/n-In x Ga 1−x N with indium fraction (x) of 0.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d153be07805eabb17e6762234beb6988
https://doi.org/10.1016/j.matcom.2018.09.007
https://doi.org/10.1016/j.matcom.2018.09.007
Publikováno v:
Artificial Intelligence and Renewables Towards an Energy Transition ISBN: 9783030638450
The present paper introduces the simulation of a photodetector based on a double GaN p-n type junction that was grown on an intrinsic zinc oxide (i-ZnO) layer. The numerical modeling study was carried out using the software Atlas (Silvaco). In additi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a008ac123a9ba49fc3e744ed994b0b
https://doi.org/10.1007/978-3-030-63846-7_93
https://doi.org/10.1007/978-3-030-63846-7_93
Publikováno v:
2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV).
Development of wide-band gap III- nitride semiconductors has been a subject of intense focus since the 1990s, primarily driven by the quest for blue lasers and high-brightness light- emitting diodes (LEDs). In parallel, III-nitrides have been studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926e8883e1be92213f3f1108a6256d93
https://doi.org/10.1109/nawdmpv.2014.6997616
https://doi.org/10.1109/nawdmpv.2014.6997616
Publikováno v:
2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV).
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the In x Ga 1−x N alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf681f0916ef20182767f27ebbb0d39
https://doi.org/10.1109/nawdmpv.2014.6997614
https://doi.org/10.1109/nawdmpv.2014.6997614
Publikováno v:
Journal of Engineering Science & Technology Review; 2014, Vol. 7 Issue 3, p133-136, 4p