Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Zehao Lin"'
Autor:
Yingjie, Li, Ye, Xu, Jin-Long, Xu, Dejian, Liu, Jingjing, Li, Zehao, Lin, Peng, Jiang, Shuaibo, Bian, Chaojie, Hao, Xiuhui, Chen
We observed the high-mass star-forming region G176.51+00.20 using the Five-hundred-meter Aperture Spherical radio Telescope (FAST) with the 19-beam tracking observational mode. This is a pilot work of searching for neutral stellar winds traced by ato
Externí odkaz:
http://arxiv.org/abs/2207.06602
Autor:
Yingjie, Li, Ye, Xu, Jin-Long, Xu, Dejian, Liu, Jingjing, Li, Zehao, Lin, Peng, Jiang, Shuaibo, Bian, Chaojie, Hao, Xiuhui, Chen
Publikováno v:
ASTROPHYS. J. LETT. 933 (2022) L26
Using the Five-hundred-meter Aperture Spherical radio Telescope (FAST) 19-beam tracking observational mode, high sensitivity and high-velocity resolution HI spectral lines have been observed toward the high-mass star-forming region G176.51+00.20. Thi
Externí odkaz:
http://arxiv.org/abs/2207.06601
Publikováno v:
ESC Heart Failure, Vol 10, Iss 1, Pp 57-65 (2023)
Abstract Aims Abnormalities in potassium homeostasis are frequently seen in hospitalized patients. A poor outcome in heart failure (HF) has been linked to both hypokalaemia and hyperkalaemia. The studies on the connection between variations in potass
Externí odkaz:
https://doaj.org/article/14787ba25a3e47748e67924f92a1c135
Publikováno v:
The Astronomical Journal, Vol 168, Iss 5, p 225 (2024)
The Canis Major (CMa) region is known for its prominent arc-shaped morphology, visible at multiple wavelengths. This study integrates molecular gas data with high-precision astrometric parameters of young stellar objects (YSOs) from Gaia DR3 to provi
Externí odkaz:
https://doaj.org/article/1a6b9c904b8a481c9d0169c8d53a52f5
Publikováno v:
The Astronomical Journal, Vol 168, Iss 1, p 34 (2024)
It is beneficial to calibrate the period–Wesenheit–metallicity relation (PWZR) of Delta Cephei stars (DCEPs), i.e., classical Cepheids, using accurate parallaxes of associated open clusters (OCs) from Gaia data release 3 (DR3). To this aim, we ob
Externí odkaz:
https://doaj.org/article/bbffca0bc4534b97adbdfaf1571b0efc
Autor:
Dejian Liu, Ye Xu, YingJie Li, Zehao Lin, Chaojie Hao, WenJin Yang, Jingjing Li, Xinrong Liu, Yiwei Dong, Shuaibo Bian, Deyun Kong
Publikováno v:
The Astrophysical Journal, Vol 964, Iss 1, p 93 (2024)
We identify a molecular bubble, and study the star formation and its feedback in the S Mon region, using multiple molecular lines, young stellar objects (YSOs), and infrared data. We revisit the distance to S Mon, ∼722 ± 9 pc, using Gaia Data Rele
Externí odkaz:
https://doaj.org/article/ff9841643fe248c5af8dda963b65553a
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 13, Iss 1, Pp 745-762 (2022)
A series of Bi2WO6/TiO2-nanotube (Bi2WO6/TiO2-NT) heterostructured composites were prepared by utilizing natural cellulose (e.g., laboratory filter paper) as the structural template. The obtained nanoarchitectonics, namely Bi2WO6/TiO2-NT nanocomposit
Externí odkaz:
https://doaj.org/article/d21000ec943342989eb73e41c825f90a
Autor:
Yu Wang, Changfu Li, Miao Yuan, Bincheng Ren, Chang Liu, Jiawei Zheng, Zehao Lin, Fuxian Ren, Dengfeng Gao
Publikováno v:
Frontiers in Cardiovascular Medicine, Vol 9 (2022)
PurposeIn recent years, the complete blood count with differential (CBC w/diff) test has drawn strong interest because of its prognostic value in cardiovascular diseases. We aimed to develop a CBC w/diff-based prediction model for in-hospital mortali
Externí odkaz:
https://doaj.org/article/2f4f394b1420495da086346ef6cf4bc6
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interfa
Externí odkaz:
https://doaj.org/article/294f143fa7da4d758056111f95bc0c44
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 846-849 (2020)
In this work, channel semiconductor is identified and demonstrated to have significant impact on the memory characteristics of ferroelectric field-effect transistors (Fe-FETs). It is understood that, to achieve high electron density at on-state, it r
Externí odkaz:
https://doaj.org/article/c106406200fb467689a13dd26558a5bb