Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zeen Han"'
Publikováno v:
Micromachines, Vol 15, Iss 1, p 96 (2023)
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR
Externí odkaz:
https://doaj.org/article/2f795b4a20324573bdd6f9e65c421e6d
Autor:
Boyang Ma, Shupeng Chen, Shulong Wang, Lingli Qian, Zeen Han, Wei Huang, Xiaojun Fu, Hongxia Liu
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1172 (2023)
A power clamp circuit, which has good immunity to false trigger under fast power-on conditions with a 20 ns rising edge, is proposed in this paper. The proposed circuit has a separate detection component and an on-time control component which enable
Externí odkaz:
https://doaj.org/article/7031355030094eb09d51fca4facbfee4
Autor:
Liu, Boyang Ma, Shupeng Chen, Shulong Wang, Lingli Qian, Zeen Han, Wei Huang, Xiaojun Fu, Hongxia
Publikováno v:
Micromachines; Volume 14; Issue 6; Pages: 1172
A power clamp circuit, which has good immunity to false trigger under fast power-on conditions with a 20 ns rising edge, is proposed in this paper. The proposed circuit has a separate detection component and an on-time control component which enable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::97a23af4ca8c79a0b10a0342723764b8