Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Zean Guo"'
Autor:
Zean Guo, Jiawei Wang, Mengmeng Li, Yawei Lv, Nianduan Lu, Chong Bi, Yeliang Wang, Ling Li, Ming Liu
Publikováno v:
Physical Review Research, Vol 6, Iss 4, p 043180 (2024)
Hall anomaly related to deviations in Hall carrier concentrations have always been recognized as signs of charge incoherence in organic semiconductors, which lack ordered lattices. In this paper, we show that the Hall carrier concentration anomaly in
Externí odkaz:
https://doaj.org/article/00003c98b64e4ddfafd5e22e1cd6a2e2
Publikováno v:
Results in Physics, Vol 53, Iss , Pp 106924- (2023)
Mobility of charge carriers in organic thin-film transistors (OTFTs) is one of the most important parameters, which is affected by the disorders in the semiconducting films. In general, realization of higher carrier concentration facilitates improved
Externí odkaz:
https://doaj.org/article/da407dcad8894efcadfefaee2f2eb9d6
Autor:
Lihua Xu, Jingrui Guo, Chen Sun, Zijie Zheng, Yannan Xu, Shijie Huang, Kaizhen Han, Wei Wei, Zean Guo, Xiao Gong, Qing Luo, Lingfei Wang, Ling Li
Publikováno v:
IEEE Electron Device Letters. 44:412-415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591bd850f8b284d1e48ed875c5bcacfa
https://doi.org/10.1109/led.2022.3233824
https://doi.org/10.1109/led.2022.3233824
Autor:
Ziheng Bai, Ying Zhao, Jiawei Wang, Dongyang Liu, Yu Shan, Zean Guo, Yuan Kai, Ke Hu, Congyan Lu, Nianduan Lu, Kui Xiao, Ling Li
Publikováno v:
Applied Physics Letters. 121:263502
In this Letter, an amorphous In-Ga-Zn-O (InGaZnO) thin-film transistor (TFT) structure with a vacuum-gap as a dielectric layer is proposed and investigated. Field-effect conduction at the vacuum/InGaZnO interfaces exhibits extraordinary effective mob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33912ec067ce7604f7a0e62b1c363f38
https://doi.org/10.1063/5.0127613
https://doi.org/10.1063/5.0127613
Publikováno v:
Advanced Materials. 35:2205517
Molecular doping has conventionally been an effective way to improve the electrical-transport performances in organic field-effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb7e621d3d8d3ff9001f7563067bf0b8
https://doi.org/10.1002/adma.202205517
https://doi.org/10.1002/adma.202205517