Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ze-Wei Jhou"'
Autor:
Ze-Wei Jhou, 周澤瑋
93
Attributed to the increasing scattering during the carriers’ moving, substrate current Ib and hot carrier degradation of MOSFETs are prevalently believed smaller at elevated temperature. However, the degradation of saturation drain current
Attributed to the increasing scattering during the carriers’ moving, substrate current Ib and hot carrier degradation of MOSFETs are prevalently believed smaller at elevated temperature. However, the degradation of saturation drain current
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9kcce3
Autor:
Chiu-Te Lee, Ke-Feng Lin, Hsin-Liang Liu, Chih-Chong Wang, Ze-Wei Jhou, Shu-Wen Lin, Shih-teng Huang
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reductio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0466c385aed8922d9d4e47157de896
https://doi.org/10.23919/ispsd.2017.7988966
https://doi.org/10.23919/ispsd.2017.7988966
Autor:
Shuang-Yuan Chen, Chia-Hao Tu, Jung-Chun Lin, Mu-Chun Wang, Po-Wei Kao, Memg-Hong Lin, Ssu-Han Wu, Ze-Wei Jhou, Sam Chou, Joe Ko, Heng-Sheng Haung
Publikováno v:
Japanese Journal of Applied Physics. 47:1527-1531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4578959bbf09a32fe0207b94b98baf3c
https://doi.org/10.1143/jjap.47.1527
https://doi.org/10.1143/jjap.47.1527
Autor:
Joe Ko, Jung−Chun Lin, Heng−Sheng Haung, Ze−Wei Jhou, Hung-Wen Chen, Sam Chou, Hung−Chuan Lin, Shuang-Yuan Chen, Tien−Fu Lei
Publikováno v:
Japanese Journal of Applied Physics. 45:3266-3271
In this paper, the impact of hot carrier stress on the mismatch properties of n and p metal–oxide–semiconductor (MOS) field-effect transistors (FETs) with different sizes produced using 0.15 µm complementary MOS (CMOS) technology is presented fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52255ea2825239a2b1c3e68c5bb99ef
https://doi.org/10.1143/jjap.45.3266
https://doi.org/10.1143/jjap.45.3266
Autor:
Tien−Fu Lei, Joe Ko, Hung-Wen Chen, Jung−Chun Lin, Hung−Chuan Lin, Heng−Sheng Haung, Sam Chou, Ze−Wei Jhou, Shuang-Yuan Chen
Publikováno v:
Japanese Journal of Applied Physics. 45:3144-3146
In this study, n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) having 20 and 32 A gate oxide thicknesses of 0.13 µm technology were used to investigate DC hot-carrier reliability at elevated temperatures up to 125 °C. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4b7e17eb517db7ed61f8b03faff49f
https://doi.org/10.1143/jjap.45.3144
https://doi.org/10.1143/jjap.45.3144
Autor:
Ze-wei Jhou, Wen-cheng Lin, Chia-Hao Tu, Po-wei Kao, Sam Chou, H. S. Haung, Shuang-Yuan Chen, Jung−Chun Lin, Joe Ko
Publikováno v:
2006 IEEE International Integrated Reliability Workshop Final Report.
Low voltages in various stress modes and temperatures were applied on two kinds of pMOSFETs to investigate the hot-carrier (HC) induced degradation. Contrary to conventional concepts, this investigation demonstrates that the worst conditions for pMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204a202d465f1b4c3e651b2e92cba70c
https://doi.org/10.1109/irws.2006.305236
https://doi.org/10.1109/irws.2006.305236
Autor:
Shuang-Yuan Chen, Chia-Hao Tu, Jung-Chun Lin, Po-Wei Kao, Wen-Cheng Lin, Ze-Wei Jhou, Sam Chou, Joe Ko, Heng-Sheng Haung
Publikováno v:
2006 IEEE International Integrated Reliability Workshop Final Report; 2006, p163-166, 4p
Autor:
Ze-Wei, Jhou
Thesis (M.A.)--National Taipei University of Technology Graduate Institute of Mechatronic Engineering
Includes bibliographical references
Includes bibliographical references