Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Ze-Bo Fang"'
Autor:
Xu Han, Ze-Bo Fang, Lei-Qiang Chu, Bi-Yun Shi, Qun Wang, Jian-Xin Tang, Wei-Dong Dou, Qiao-Jun Cao, Han Huang, Haifei Wu
Publikováno v:
The Journal of Physical Chemistry C. 123:2642-2650
Engineering graphene into a particular shape is vital for potential industrial applications. To this end, better understanding of the growth mechanism is needed to control the growth behavior of graphene on a substrate surface with a specific shape.
Publikováno v:
Key Engineering Materials. :731-736
The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm
Publikováno v:
Advanced Materials Research. 323:75-78
Amorphous Al2O3 and Er2O3 alloyed films were deposited on Si(001) substrates by radio frequency magnetron sputtering technique. Ellipsometry measurements show that the weighted average reflectivity in the wavelength between 400 and 1000 nm for the Er
Publikováno v:
Key Engineering Materials. 486:163-166
Er2O3 films with good crystallinity have been achieved on an oxidized Si (111) surface by molecule beam epitaxy. The initial growth of Er2O3 films epitaxially grown on Si surfaces is investigated by in situ reflection high energy electron diffraction
Publikováno v:
Key Engineering Materials. :1191-1194
Reflectance design and synthesis for Er2O3single layer and Er2O3/TiO2double layer are made. The optimum reflectance and thickness are determined. The developed simulator can be used for the optimization of antireflecting coatings for optoelectronic d
Publikováno v:
Key Engineering Materials. :345-348
Amorphous Al2O3 doped Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron sputtering technique. Emission spectra exhibit a strong emission band around 410 nm and a series of emission band near 970, 980, 1018, 1042 and 1080nm
Publikováno v:
Materials Letters. 116:43-45
La2O3 films were grown on Ge substrates by radio frequency magnetron sputtering technique. The band alignment of the La2O3/Ge heterojunction was analyzed by X-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La2O3 t
Publikováno v:
Materials Science Forum. :612-615
Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron technique. X-ray photoelectron spectroscopy, x-ray diffraction and atomic force microscopy show the Er2O3 films obtained are stoichiometric, amorphous, and uniform. The ele
Autor:
Ze Bo Fang, Yan Yan Zhu
Publikováno v:
Materials Science Forum. :361-364
Al doped Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron technique. X-ray diffraction and atomic force microscopy show the Al doped Er2O3 films obtained are amorphous and uniform. The optical constants are studied which
Autor:
Ze-Bo Fang
Publikováno v:
Journal of Inorganic Materials. 23:357-360