Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Ze Sheng Chen"'
Publikováno v:
Journal of High Energy Physics, Vol 2019, Iss 12, Pp 1-19 (2019)
Abstract We study q ¯ $$ \overline{q} $$ q-hybrid mixing for the light vector mesons and q ¯ $$ \overline{q} $$ q-glueball mixing for the light scalar mesons in Monte-Carlo based QCD Laplace sum rules. By calculating the two-point correlation funct
Externí odkaz:
https://doaj.org/article/077235b322674b90a6047a963648b9b0
Autor:
Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot la
Externí odkaz:
https://doaj.org/article/fe7c372d63104f22a983cdd056c5a376
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 μm) cavity of distributed B
Externí odkaz:
https://doaj.org/article/b57dd394e11843e3a57c856e0cc07d0e
Publikováno v:
Physical Review D. 105
Autor:
Xuewen Geng, Zhichuan Niu, Ben Ma, Si-Hang Wei, Xu Jianxing, Xiang-Jun Shang, Haiqiao Ni, Ze-Sheng Chen, Guo-Wei Zha, Li-Chun Zhang
Publikováno v:
Materials Science in Semiconductor Processing. 52:68-74
Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-pretreated Si(111) substrates under different As4/Ga flux ratios (V/III ratios). It has been found that the fraction of vertical wires would be nearly 100% when the As4/Ga
Autor:
Shulun Li, Xiaowu He, Ze-Sheng Chen, Yao Chen, Xiang-Jun Shang, Haiqiao Ni, Ben Ma, Yujun Shi, Zhichuan Niu, Xingliang Su
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085126-085126-5 (2020)
InAs/GaAs quantum dots (QDs) grown on a GaAs (001) substrate were studied by photoluminescence spectroscopy. Both C2v and D3h QDs with featured XX11, X11+, and XX21+ spectra have been found. A local defect field tunes the dominant exciton from X+ to
Autor:
Ke-Lu Zhang, Xiao-Ran Cui, Haiqiao Ni, Yingqiang Xu, Zhichuan Niu, Jing-Lun Li, Ding Ying, Su Xiangbin, Ben Ma, Ze-Sheng Chen
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with
Single self-assembled InAs/GaAs quantum dots in photonic nanostructures: The role of nanofabrication
Autor:
Jin Dong Song, Hai Qiao Ni, Varun B. Verma, Kartik Srinivasan, Zhi Chuan Niu, Sae Woo Nam, Kumarasiri Konthasinghe, Ze Sheng Chen, Richard P. Mirin, John Lawall, Vikas Anant, Jin Liu, Marcelo Davanco, Ben Ma
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::565dda223255f57f3bd69871fbf3b366
https://europepmc.org/articles/PMC6459412/
https://europepmc.org/articles/PMC6459412/
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Nanoscale Research Letters
Nanoscale Research Letters
A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 μm) cavity of distributed Bragg refl
Autor:
Siyuan Yu, Rongbin Su, Xue-Hua Wang, Ze-Sheng Chen, Shunfa Liu, Ben Ma, Rong-Ling Su, Haiqiao Ni, Yuming Wei, Yujia Wei, Zhichuan Niu, Ying Yu
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Liu, S, Wei, Y, Su, R, Su, R, Ma, B, Chen, Z, Ni, H, Niu, Z, Yu, Y, Wei, Y, Wang, X & Yu, S 2017, ' A deterministic quantum dot micropillar single photon source with >65% extraction efficiency based on fluorescence imaging method ', Scientific Reports, vol. 7, no. 1, 13986 . https://doi.org/10.1038/s41598-017-13433-w
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Liu, S, Wei, Y, Su, R, Su, R, Ma, B, Chen, Z, Ni, H, Niu, Z, Yu, Y, Wei, Y, Wang, X & Yu, S 2017, ' A deterministic quantum dot micropillar single photon source with >65% extraction efficiency based on fluorescence imaging method ', Scientific Reports, vol. 7, no. 1, 13986 . https://doi.org/10.1038/s41598-017-13433-w
We report optical positioning of single quantum dots (QDs) in planar distributed Bragg reflector (DBR) cavity with an average position uncertainty of ≈20 nm using an optimized photoluminescence imaging method. We create single-photon sources based