Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ze Han Wu"'
Autor:
Ze Han Wu, Hui Chao Wang, Hon Fai Wong, Yu Kuai Liu, Sheung Mei Shamay Ng, Chi Wah Leung, Jiyan Dai, Hei Man Yau, Chun Hung Suen
Publikováno v:
ACS nano. 14(6)
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe
Publikováno v:
Journal of Computational Electronics. 16:1057-1065
The next-generation nonvolatile memory storage may well be based on resistive random access memories (RRAMs). $$\hbox {TiO}_{2}$$ and $$\hbox {HfO}_{2}$$ have been widely used as the resistive switching layer for RRAM devices. However, the electronic
Publikováno v:
ACS Photonics. 4:2203-2211
Recently, Ga2O3-based, solar-blind photodetectors (PDs) have been extensively studied for various commercial and military applications. However, to date, studies have focused only on the crystalline phases, especially β-Ga2O3, and the crystalline qu
Publikováno v:
Materials, Vol 10, Iss 2, p 168 (2017)
Materials; Volume 10; Issue 2; Pages: 168
Materials
Materials; Volume 10; Issue 2; Pages: 168
Materials
Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the
Publikováno v:
Optical Materials Express. 7:3643
Recently, monoclinic Ga2O3 (β-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-plane sapphire
Publikováno v:
Journal of Physics D: Applied Physics. 50:145106
Amorphous InGaZnO4 thin film transistors (a-IGZO TFTs) with HfLaO gate dielectrics have been widely demonstrated to possess extremely excellent electrical characteristics, and thus show great potential for applications in various next-generation elec
Autor:
Ziji Liu, Yuanming Chen, Ya Dong Jiang, Wei Li, Zhou Li, Naiman Liao, Ze-Han Wu, Li Shuangding, Xu Jin
Publikováno v:
Journal of Physics D: Applied Physics. 41:205412
The effects of 1.0 MeV electron irradiation on the dark conductivity and amorphous network of heavily phosphorus-doped a-Si : H films have been studied. The electron irradiation leads to a strong decrease by about two orders of magnitude in the dark
Publikováno v:
Journal of Physics D: Applied Physics; 4/12/2017, Vol. 50 Issue 14, p1-1, 1p