Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Zdenko Zaprazny"'
Autor:
Valerio Bellucci, Sarlota Birnsteinova, Tokushi Sato, Romain Letrun, Jayanath C. P. Koliyadu, Chan Kim, Gabriele Giovanetti, Carsten Deiter, Liubov Samoylova, Ilia Petrov, Luis Lopez Morillo, Rita Graceffa, Luigi Adriano, Helge Huelsen, Heiko Kollmann, Thu Nhi Tran Calliste, Dusan Korytar, Zdenko Zaprazny, Andrea Mazzolari, Marco Romagnoni, Eleni Myrto Asimakopoulou, Zisheng Yao, Yuhe Zhang, Jozef Ulicny, Alke Meents, Henry N. Chapman, Richard Bean, Adrian Mancuso, Pablo Villanueva-Perez, Patrik Vagovic
Publikováno v:
Journal of Synchrotron Radiation, Vol 31, Iss 6, Pp 1534-1550 (2024)
X-ray multi-projection imaging (XMPI) is an emerging experimental technique for the acquisition of rotation-free, time-resolved, volumetric information on stochastic processes. The technique is developed for high-brilliance light-source facilities, a
Externí odkaz:
https://doaj.org/article/5450c44c630e4f7f8fbd793be6aa3f6a
Autor:
Peter Nadazdy, Peter Siffalovic, D. Korytár, Eva Majkova, Jakub Hagara, Zdenko Zaprazny, Matej Jergel, Petr Mikulík
Publikováno v:
Journal of Applied Crystallography. 54:730-738
A four-bounce monochromator assembly composed of Ge(111) and Ge(220) monolithic channel-cut monochromators with V-shaped channels in a quasi-dispersive configuration is presented. The assembly provides an optimal design in terms of the highest transm
Publikováno v:
J Appl Crystallogr
Journal of applied crystallography 53 (2020): 629–634. doi:10.1107/S1600576720003702
info:cnr-pdr/source/autori:Ferrari, Claudio; Beretta, Sara; Rotunno, Enzo; Korytar, Dusan; Zaprazny, Zdenko/titolo:Compressive strain formation in surface-damaged crystals/doi:10.1107%2FS1600576720003702/rivista:Journal of applied crystallography/anno:2020/pagina_da:629/pagina_a:634/intervallo_pagine:629–634/volume:53
Journal of applied crystallography 53 (2020): 629–634. doi:10.1107/S1600576720003702
info:cnr-pdr/source/autori:Ferrari, Claudio; Beretta, Sara; Rotunno, Enzo; Korytar, Dusan; Zaprazny, Zdenko/titolo:Compressive strain formation in surface-damaged crystals/doi:10.1107%2FS1600576720003702/rivista:Journal of applied crystallography/anno:2020/pagina_da:629/pagina_a:634/intervallo_pagine:629–634/volume:53
The mechanism of formation of residual strain in crystals with a damaged surface has been studied by transmission electron microscopy in GaAs wafers ground with sandpaper. The samples showed a dislocation network located near the sample surface penet