Zobrazeno 1 - 10
of 206
pro vyhledávání: '"Zbigniew, Galazka"'
Autor:
Xin Yu Zheng, Sanyum Channa, Lauren J. Riddiford, Jacob J. Wisser, Krishnamurthy Mahalingam, Cynthia T. Bowers, Michael E. McConney, Alpha T. N’Diaye, Arturas Vailionis, Egecan Cogulu, Haowen Ren, Zbigniew Galazka, Andrew D. Kent, Yuri Suzuki
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization sw
Externí odkaz:
https://doaj.org/article/6ec208caa96f416d8ab4bd19a5a6a87f
Autor:
Xin Yu Zheng, Sanyum Channa, Lauren J. Riddiford, Jacob J. Wisser, Krishnamurthy Mahalingam, Cynthia T. Bowers, Michael E. McConney, Alpha T. N’Diaye, Arturas Vailionis, Egecan Cogulu, Haowen Ren, Zbigniew Galazka, Andrew D. Kent, Yuri Suzuki
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/b40115d17c9441b2884770abe3f4cb5c
Autor:
Wahib Aggoune, Alberto Eljarrat, Dmitrii Nabok, Klaus Irmscher, Martina Zupancic, Zbigniew Galazka, Martin Albrecht, Christoph Koch, Claudia Draxl
Publikováno v:
Communications Materials, Vol 3, Iss 1, Pp 1-10 (2022)
The BaSnO3 perovskite is promising for electronic applications due to its transparency and high room-temperature mobility, but its effective masses, band gaps, and absorption edge are still controversial. Here, a combined theoretical and experimental
Externí odkaz:
https://doaj.org/article/11abddcf6c934a69917064637b38052c
Autor:
Palvan Seyidov, Joel B. Varley, Zbigniew Galazka, Ta-Shun Chou, Andreas Popp, Andreas Fiedler, Klaus Irmscher
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111109-111109-9 (2022)
Optical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionizati
Externí odkaz:
https://doaj.org/article/46235c0c42994bb89ea26edd9cb24222
Autor:
Marcin E. Witkowski, Konrad J. Drozdowski, Michał Makowski, Winicjusz Drozdowski, Andrzej J. Wojtowicz, Klaus Irmscher, Robert Schewski, Zbigniew Galazka
Publikováno v:
Optical Materials: X, Vol 16, Iss , Pp 100210- (2022)
Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, cap
Externí odkaz:
https://doaj.org/article/4da6d2f5fe4e4fd38976695605dd9ca6
Autor:
Ming-Hsun Lee, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Andreas Popp, Rebecca L. Peterson
Publikováno v:
APL Materials, Vol 10, Iss 9, Pp 091105-091105-8 (2022)
Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for
Externí odkaz:
https://doaj.org/article/1495aa2bd6aa4f23ab5166021e76bfaf
Autor:
Winicjusz Drozdowski, Michał Makowski, Abdellah Bachiri, Marcin E. Witkowski, Andrzej J. Wojtowicz, Lukasz Swiderski, Klaus Irmscher, Robert Schewski, Zbigniew Galazka
Publikováno v:
Optical Materials: X, Vol 15, Iss , Pp 100157- (2022)
Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their bas
Externí odkaz:
https://doaj.org/article/ceea2127301e43b49d2f9f0cd170815e
Autor:
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021)
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth pa
Externí odkaz:
https://doaj.org/article/e1255397886d4803b88f3d7b688b2f68
Autor:
Patrick Haase, Helena Gorniak Christensen, Ulla Gro Nielsen, Christian Bender Koch, Zbigniew Galazka, Juraj Majzlan
Publikováno v:
Chemical Thermodynamics and Thermal Analysis, Vol 1, Iss , Pp 100005- (2021)
In this work, we determined thermodynamic properties of a suite of tin perovskites □2(BSn4+)(OH,O)6 that correspond to the minerals burtite (B = Ca), jeanbandyite (Fe3+), schoenfliesite (Mg), wickmanite (Mn), vismirnovite (Zn), and mushistonite (Cu
Externí odkaz:
https://doaj.org/article/fe628bec1fe74be7b92471bee4383158
Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055005-055005-7 (2020)
The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to
Externí odkaz:
https://doaj.org/article/d2c8e7b6cbde45bbb06c4568113e854b