Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Zaven Kalayjian"'
Publikováno v:
Microwave and Optical Technology Letters. 37:269-273
The analytical solution of a wave equation that describes the propagation of a femtosecond laser pulse in a dispersion-free finite-length spatially chirped medium with 1D periodic inhomogeneity is presented. Such media are important to modern optics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549ccace4aa5b6cff71f79f9302e880a
https://doi.org/10.1002/mop.10891
https://doi.org/10.1002/mop.10891
Autor:
Edward Divanyan, Razmik Avagyan, Davit Hovhannisyan, Komitas Stepanyan, Zaven Kalayjian, A.V. Daryan, D.M. Meghavoryan
Publikováno v:
Microwave and Optical Technology Letters. 33:361-365
A mathematical description of the spectral and temporal changes in a probe pulse occurring as a result of cross-phase modulation interaction between the probe pulse and a soliton with a nonoverlapping spectrum and different delay copropagating in a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::757524fe4b8d44127e4f11ab4d66e368
https://doi.org/10.1002/mop.10322
https://doi.org/10.1002/mop.10322
Autor:
D.M. Meghavoryan, Davit Hovhannisyan, A.V. Daryan, Sergey Dashyan, Zaven Kalayjian, Komitas Stepanyan, Razmik Avagyan
Publikováno v:
Optics Communications. 203:371-375
The stationary form of a femtosecond pulse in an anomalously dispersive medium with third-order nonlinearity in the presence of quasi-continuous radiation is obtained by solving the wave equation. It is found that under these conditions the soliton r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::254280827c190c3464ec3c081f56d270
https://doi.org/10.1016/s0030-4018(02)01125-2
https://doi.org/10.1016/s0030-4018(02)01125-2
Autor:
Zaven Kalayjian, Andreas G. Andreou
Publikováno v:
The Springer International Series in Engineering and Computer Science ISBN: 9780792381587
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70724c004cc003c6fe46d1e81999c3ca
https://doi.org/10.1007/978-0-585-28001-1_10
https://doi.org/10.1007/978-0-585-28001-1_10
Publikováno v:
Applied Physics Letters. 70:470-471
We report visible (380–650 nm) electroluminescence from reverse-biased silicon p-n junctions and from n- and p-type field-effect transistors designed for a standard chip-fabrication process. We measured the spectra of over 40 junctions and devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80404ebf6cd17f45f85c43a3a7925a15
https://doi.org/10.1063/1.118184
https://doi.org/10.1063/1.118184
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.