Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Zaojun Ma"'
Autor:
Zhiyuan Qi, Yunqing Pei, Laili Wang, Zaojun Ma, Zhewei Zhang, Yan Wang, Kangping Wang, Xu Yang
Publikováno v:
IEEE Transactions on Power Electronics. 38:447-459
Publikováno v:
2022 IEEE 13th International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
SiC power semiconductor is a good solution for the industrial applications at extremely high temperature. However, due to the limitation of the packaging operating temperature, the high-temperature characteristics of SiC devices are still not well un
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
Compared with Si devices, SiC devices have faster switching speed and higher dv/dt and di/dt. High dv/dt through Miller capacitor and high di/dt through common source inductance produce more serious gate-source voltage spike. Meanwhile, limited by th
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
The switching devices in pulsed power supplies need to be able to withstand high voltage and large current, and the switching characteristics of the devices are closely related to the rising/falling edge of the output pulse and the switching losses.