Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Zang, Keyan"'
High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor depos
Externí odkaz:
http://hdl.handle.net/1721.1/7366
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN fi
Externí odkaz:
http://hdl.handle.net/1721.1/7362
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been studied using atomic force micr
Externí odkaz:
http://hdl.handle.net/1721.1/3841
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized by optical microscopy, scan
Externí odkaz:
http://hdl.handle.net/1721.1/3713
Akademický článek
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Autor:
Rahimabady, Mojtaba, Tan, Chin Yaw, Tan, Sze Yu, Chen, Shuting, Zhang, Lei, Chen, Yi Fan, Yao, Kui, Zang, Keyan, Humbert, Aurélie, Soccol, Dimitri, Bolt, Michael
Publikováno v:
In Sensors & Actuators: B. Chemical May 2017 243:596-601
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 6, Pp 1051-1056 (2010)
Abstract The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III–V power devices and optical devices. We have developed a simple w
Externí odkaz:
https://doaj.org/article/a5876f9052014037bb3c13a16b328d79
Autor:
Zhou, Hailong, Chua, S.J., Zang, Keyan, Wang, L.S., Tripathy, S., Yakovlev, N., Thomas, Osipowicz
Publikováno v:
In Journal of Crystal Growth 2007 298:511-514
Akademický článek
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Publikováno v:
physica status solidi c. 6
InGaN/GaN multiple quantum wells (MQWs) nanostructures were demonstrated on high density GaN nanorod arrays with controllable size by using template-assisted selective area heteroepitaxial growth. The nanostructures with average diameter of ∼60 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16010807d077af40249b43c19cafce46
https://doi.org/10.1002/pssc.200880777
https://doi.org/10.1002/pssc.200880777